Metallized polypropylene ??Low self inductance ??High capacitance ??Low ESR

文件：214.66 Kbytes 页数：3 Pages

ILLINOISCAPACITOR

2 TERMINALES PARA BORNERA TIPO DESMONTABLE

DESCRIPCIÓN Headers para bornera tipo desmontable. Incluye una pieza con dos headers.

文件：334.32 Kbytes 页数：1 Pages

AGELECTRONICA

3 TERMINALES PARA BORNERA TIPO DESMONTABLE

Descripción Headers para bornera tipo desmontable. Incluye una pieza con tres headers.

文件：175.98 Kbytes 页数：1 Pages

AGELECTRONICA

Complementary enhancement mode MOS transistor

DESCRIPTION One N-channel and one P-channel enhancement mode MOS transistor in an 8-pin SOT96-1 (SO8) plastic package. FEATURES • Very low on-state resistance • High-speed switching • No secondary breakdown. APPLICATIONS • Motor and actuator driver • Power management • Synchronized rectif

文件：55.05 Kbytes 页数：8 Pages

PHI

飞利浦

Complementary enhancement mode MOS transistors

DESCRIPTION One N-channel and one P-channel enhancement mode MOS transistor in an 8-pin plastic SOT96-1 (SO8) package. FEATURES • High-speed switching • No secondary breakdown • Very low on-state resistance. APPLICATIONS • Motor and actuator driver • Power management • Synchronized rectif

文件：158.87 Kbytes 页数：20 Pages

PHI

飞利浦

Complementary enhancement mode MOS transistors

DESCRIPTION One N-channel and one P-channel enhancement mode MOS transistor in an 8-pin plastic SOT96-1 (SO8) package. FEATURES • High-speed switching • No secondary breakdown • Very low on-resistance. APPLICATIONS • Motor and actuator driver • Power management • Synchronized rectificatio

文件：161.77 Kbytes 页数：16 Pages

PHI

飞利浦

Complementary intermediate level FET

1.1 General description Intermediate level N-channel and P-channel complementary pair enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applic

文件：826.38 Kbytes 页数：16 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

Complementary enhancement mode MOS transistors

1.1 General description One N-channel and one P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits  Suitable for high fr

文件：934.71 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

Complementary enhancement mode MOS transistors

DESCRIPTION One N-channel and one P-channel enhancement mode MOS transistor in an 8-pin plastic SOT96-1 (SO8) package. FEATURES • High-speed switching • No secondary breakdown. APPLICATIONS • Universal line interface in telephone sets • Relay, high-speed and line transfo

文件：157.35 Kbytes 页数：16 Pages

PHI

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CPTC Thermistor

文件：46.66 Kbytes 页数：2 Pages

THINKING

兴勤电子