Complementary enhancement mode MOS transistor

DESCRIPTION One N-channel and one P-channel enhancement mode MOS transistor in an 8-pin SOT96-1 (SO8) plastic package. FEATURES • Very low on-state resistance • High-speed switching • No secondary breakdown. APPLICATIONS • Motor and actuator driver • Power management • Synchronized rectif

文件：55.05 Kbytes 页数：8 Pages

PHI

飞利浦

Complementary enhancement mode MOS transistor

DESCRIPTION\nOne N-channel and one P-channel enhancement mode MOS transistor in an 8-pin SOT96-1 (SO8) plastic package.FEATURES\n• Very low on-state resistance\n• High-speed switching\n• No secondary breakdown.APPLICATIONS\n• Motor and actuator driver\n• Power management\n• Synchronized rectificatio • Very low on-state resistance\n• High-speed switching\n• No secondary breakdown.;

恩XP

恩智浦

DFB/EA Laser Module for 2.5 Gb/s Applications

Description The laser module, intended for DWDM applications at OC-48/STM-16, consists of a DFB laser with integrated absorption modulator mounted in a high speed package including isolator. Laser wavelengths are available according to the ITU-T grid. Key Features • 1550 nm DFB CW source monoli

文件：290.99 Kbytes 页数：4 Pages

Ericsson

爱立信

KEMET
DIP

KEMETKEMET Corporation

基美

上传：深圳市和悦电子贸易有限公司

AMI
模块

AMI

上传：深圳市宏捷佳电子科技有限公司