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DESD24VS2SO

24VCAN/LINBUSPROTECTOR

DIODESDiodes Incorporated

达尔科技

ESD24VS2U

SiliconTVSdiodes

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

ESD24VS2U

SiliconTVSdiodes

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

PESD24VS2UAT

DoubleESDprotectiondiodesinSOT23package

FEATURES ·UnidirectionalESDprotectionofuptotwolines ·Common-cathodeconfiguration ·Max.peakpulsepower:Ppp=330Wattp=8/20ms ·Lowclampingvoltage:V(CL)R=20VatIpp=18A ·Ultra-lowreverseleakagecurrent:IRM30kV ·IEC61000-4-2;lev

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PESD24VS2UAT

DoubleESDprotectiondiodeinSOT23package

1.Generaldescription UnidirectionaldoubleESDprotectiondiodeincommoncathodeconfigurationinasmallSOT23 Surface-MountedDevice(SMD)plasticpackage,designedtoprotectuptotwodatalinesagainst damagefromElectroStaticDischarge(ESD)andothertransients. 2.Featuresandbene

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PESD24VS2UAT

DoubleESDprotectiondiodesinSOT23package

DESCRIPTION UnidirectionaldoubleESDprotectiondiodesincommoncathodeconfigurationintheSOT23plasticpackage.DesignedtoprotectuptotwotransmissionordatalinesagainstdamagefromElectroStaticDischarge(ESD)andothertransients. FEATURES •UnidirectionalESDprotectionofupt

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

PESD24VS2UAT

LowVCEsat(BISS)transistors

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

PESD24VS2UAT

DoubleESDprotectiondiodesinSOT23package

DESCRIPTION UnidirectionaldoubleESDprotectiondiodesincommoncathodeconfigurationintheSOT23plasticpackage.DesignedtoprotectuptotwotransmissionordatalinesagainstdamagefromElectroStaticDischarge(ESD)andothertransients. FEATURES •UnidirectionalESDprotectionofupt

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

PESD24VS2UQ

DoubleESDprotectiondiodesinSOT663package

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

PESD24VS2UQ

DoubleESDprotectiondiodesinSOT663package

Generaldescription UnidirectionaldoubleElectroStaticDischarge(ESD)protectiondiodesinaSOT663ultrasmallandflatleadSurface-MountedDevice(SMD)plasticpackagedesignedtoprotectuptotwosignallinesfromthedamagecausedbyESDandothertransients. Features ■UnidirectionalE

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

PESD24VS2UQ

DoubleESDprotectiondiodesinSOT663package

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

PESD24VS2UQ

DoubleESDprotectiondiodesinSOT663package

1.1Generaldescription UnidirectionaldoubleElectroStaticDischarge(ESD)protectiondiodesinaSOT663ultra smallandflatleadSurface-MountedDevice(SMD)plasticpackagedesignedtoprotect uptotwosignallinesfromthedamagecausedbyESDandothertransients. 1.2Features 1.3Appl

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PESD24VS2UT

300Wpeakpulsepower(tp=8/20μs)

Features 300Wpeakpulsepower(tp=8/20μs) Bidirectionalandunidirectionalconfigurations Solid-statesilicon-avalanchetechnology Lowclampingvoltage Lowleakagecurrent IEC61000-4-2±30kVcontact±30kVair IEC61000-4-4(EFT)40A(5/50ns) IEC61000-4-5(Lightning)6A(8/20μs) Applica

UMWUMW

友台友台半导体

PESD24VS2UT

DoubleESDprotectiondiodesinSOT23package

DESCRIPTION Uni-directionaldoubleESDprotectiondiodesinaSOT23plasticpackage.DesignedtoprotectuptotwotransmissionordatalinesfromElectroStaticDischarge(ESD)damage. FEATURES •Uni-directionalESDprotectionofuptotwolines •Max.peakpulsepower:Ppp=330Wattp=8/2

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

PESD24VS2UT

DoubleESDprotectiondiodesinSOT23package

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

PESD24VS2UT

LowVCEsat(BISS)transistors

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

PESD24VS2UT

DoubleESDprotectiondiodesinSOT23package

DESCRIPTION Uni-directionaldoubleESDprotectiondiodesinaSOT23plasticpackage.DesignedtoprotectuptotwotransmissionordatalinesfromElectroStaticDischarge(ESD)damage. FEATURES •Uni-directionalESDprotectionofuptotwolines •Max.peakpulsepower:Ppp=330Wattp=8/2

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

PESD24VS2UT

DoubleESDprotectiondiodesinSOT23package

FEATURES •Uni-directionalESDprotectionofuptotwolines •Max.peakpulsepower:Ppp=330Wattp=8/20μs •Lowclampingvoltage:V(CL)R=20VatIpp=18A •Ultra-lowreverseleakagecurrent:IRM23kV •IEC61000-4-2;level4(ESD) •IEC61000-4-5(su

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PESD24VS2UT-Q

DoubleESDprotectiondiode

1.Generaldescription Uni-directionaldoubleESDprotectiondiodeinaSOT23plasticpackage.Designedtoprotectupto twotransmissionordatalinesfromElectroStaticDischarge(ESD)damage. 2.Featuresandbenefits •Uni-directionalESDprotectionofuptotwolines •Max.peakpulsep

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

TESD24VS2BT

200W,24VESDProtectionArray

TSCTaiwan Semiconductor Company, Ltd

台半 台湾半导体股份有限公司

供应商型号品牌批号封装库存备注价格
NXP/恩智浦
2019+
SOT23-3
30000
询价
NXP/恩智浦
23+
SOT-23
90000
只做原装 全系列供应 价格优势 可开增票
询价
NXP/恩智浦
23+
SOT23
50000
全新原装正品现货,支持订货
询价
NXP/恩智浦
2022
SOT23
80000
原装现货,OEM渠道,欢迎咨询
询价
NEXPERIA/安世
1807+
SOT-23
1000
进口原装现货假一赔万力挺实单
询价
NXP/恩智浦
22+
SOT-23
34137
只做原装进口现货
询价
BORN
24+25+/26+27+
车规-元器件
143788
一一有问必回一特殊渠道一有长期订货一备货HK仓库
询价
NEXPERIA/安世
23+
12000
询价
Nexperia/安世
24+
SOT23
39500
进口原装现货 支持实单价优
询价
NXP
2017+
SOT-457
45852
深圳香港代理原装现货库存(美国-日本-台湾)可开正规增
询价
更多PESD24VS2UTESD静电二极管供应商 更新时间2024-5-24 17:30:00