PBSS5320D

20 V low VCEsat PNP transistor

DESCRIPTION PNPlowVCEsattransistorinaSOT457(SC-74)plasticpackage. FEATURES •Lowcollector-emittersaturationvoltage •Highcurrentcapability •Improveddevicereliabilityduetoreducedheat generation APPLICATIONS •Supplylineswitchingcircuits •Batterymanagementappli

PHI

PBSS5320D

20 V low VCEsat PNP transistor

DESCRIPTION PNPlowVCEsattransistorinaSOT457(SC-74)plasticpackage. FEATURES •Lowcollector-emittersaturationvoltage •Highcurrentcapability •Improveddevicereliabilityduetoreducedheat generation APPLICATIONS •Supplylineswitchingcircuits •Batterymanagementappli

ETC

PBSS5320D

丝印：52；Package：SOT457；20 V low VCEsat PNP transistor

FEATURES •Lowcollector-emittersaturationvoltage •Highcurrentcapability •Improveddevicereliabilityduetoreducedheatgeneration APPLICATIONS •Supplylineswitchingcircuits •Batterymanagementapplications •DC/DCconverterapplications •Strobeflashunits •Heavydutybatterypow

PBSS5320T

丝印：ZH*；Package：SOT-23；20 V, 3 A PNP low VCEsat (BISS) transistor

DESCRIPTION PNPlowVCEsattransistorinaSOT23plasticpackage. NPNcomplement:PBSS4320T. FEATURES •Lowcollector-emittersaturationvoltageVCEsatand correspondinglowRCEsat •Highcollectorcurrentcapability •Highcollectorcurrentgain •Improvedefficiencyduetoreducedhea

PHI

PBSS5320T

丝印：ZH*；Package：SOT-23；20 V, 3 A PNP low VCEsat (BISS) transistor

DESCRIPTION PNPlowVCEsattransistorinaSOT23plasticpackage. NPNcomplement:PBSS4320T. FEATURES •Lowcollector-emittersaturationvoltageVCEsatand correspondinglowRCEsat •Highcollectorcurrentcapability •Highcollectorcurrentgain •Improvedefficiencyduetoreducedhea

ETC

PBSS5320T

Silicon PNP transistor in a SOT-23 Plastic Package

Descriptions SiliconPNPtransistorinaSOT-23PlasticPackage. Features LowVCE(sat),highcurrent. Applications Generalpurposeswitchingandmuting,LCDback-lighting,supplylineswitchingcircuits.

PBSS5320T

丝印：ZH；Package：SOT23；20 V, 3 A PNP low VCEsat transistor

1.Generaldescription PNPlowVCEsattransistorinasmallSOT23(TO-236AB)Surface-MountedDevice(SMD)plastic package. NPNcomplement:PBSS4320T 2.Featuresandbenefits •Lowcollector-emittersaturationvoltageVCEsatandcorrespondinglowRCEsat •Highcollectorcurrentcapability

PBSS5320T

20 V, 3 A PNP low VCEsat (BISS) transistor; • Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat\n• High collector current capability\n• High collector current gain\n• Improved efficiency due to reduced heat generation.\n• AEC-Q101 qualified\n;

PNP low VCEsat transistor in a SOT23 plastic package. NPN complement: PBSS4320T.\n

PBSS5320T-Q

丝印：ZH；Package：SOT23；20 V, 3 A PNP low VCEsat transistor

1.Generaldescription PNPlowVCEsattransistorininasmallSOT23(TO-236AB)Surface-MountedDevice(SMD)plastic package. NPNcomplement:PBSS4320T 2.Featuresandbenefits •Lowcollector-emittersaturationvoltageVCEsatandcorrespondinglowRCEsat •Highcollectorcurrentcapabilit

PBSS5320X

20 V, 3 A PNP Low VCEsat (BISS) transistor

DESCRIPTION PNPlowVCEsattransistorinaSOT89plasticpackage. NPNcomplement:PBSS4320X. FEATURES •SOT89(SC-62)package •Lowcollector-emittersaturationvoltageVCEsat •Highcollectorcurrentcapability:ICandICM •Higherefficiencyleadingtolessheatgeneration •Reducedprin

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