20 V low VCEsat PNP transistor

DESCRIPTION PNP low VCEsat transistor in a SOT457 (SC-74) plastic package. FEATURES • Low collector-emitter saturation voltage • High current capability • Improved device reliability due to reduced heat generation APPLICATIONS • Supply line switching circuits • Battery management appli

文件：48.53 Kbytes 页数：8 Pages

PHI

飞利浦

20 V low VCEsat PNP transistor

DESCRIPTION PNP low VCEsat transistor in a SOT457 (SC-74) plastic package. FEATURES • Low collector-emitter saturation voltage • High current capability • Improved device reliability due to reduced heat generation APPLICATIONS • Supply line switching circuits • Battery management appli

文件：132.19 Kbytes 页数：7 Pages

恩XP

丝印：52；Package：SOT457；20 V low VCEsat PNP transistor

FEATURES •Low collector-emitter saturation voltage •High current capability •Improved device reliability due to reduced heat generation APPLICATIONS •Supply line switching circuits •Battery management applications •DC/DC converter applications •Strobe flash units •Heavy duty battery pow

文件：342.11 Kbytes 页数：8 Pages

NEXPERIA

安世

丝印：ZH；Package：SOT23；20 V, 3 A PNP low VCEsat transistor

1. General description PNP low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4320T 2. Features and benefits • Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat • High collector current capability

文件：1.16846 Mbytes 页数：11 Pages

NEXPERIA

安世

Silicon PNP transistor in a SOT-23 Plastic Package

Descriptions Silicon PNP transistor in a SOT-23 Plastic Package. Features Low VCE(sat), high current. Applications General purpose switching and muting, LCD back-lighting, supply line switching circuits.

文件：653.03 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子

丝印：ZH*；Package：SOT-23；20 V, 3 A PNP low VCEsat (BISS) transistor

DESCRIPTION PNP low VCEsat transistor in a SOT23 plastic package. NPN complement: PBSS4320T. FEATURES • Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat • High collector current capability • High collector current gain • Improved efficiency due to reduced hea

文件：178.49 Kbytes 页数：10 Pages

恩XP

丝印：ZH*；Package：SOT-23；20 V, 3 A PNP low VCEsat (BISS) transistor

DESCRIPTION PNP low VCEsat transistor in a SOT23 plastic package. NPN complement: PBSS4320T. FEATURES • Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat • High collector current capability • High collector current gain • Improved efficiency due to reduced hea

文件：85.63 Kbytes 页数：10 Pages

PHI

飞利浦

丝印：ZH；Package：SOT23；20 V, 3 A PNP low VCEsat transistor

1. General description PNP low VCEsat transistor in in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4320T 2. Features and benefits • Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat • High collector current capabilit

文件：237.12 Kbytes 页数：10 Pages

NEXPERIA

安世

丝印：S45；Package：SOT89；20 V, 3 A PNP low VCEsat (BISS) transistor

1. General description PNP low VCEsat transistor in a medium power flat lead SOT89 plastic package. NPN complement: PBSS4320X 2. Features and benefits • SOT89 (SC-62) package • Low collector-emitter saturation voltage VCEsat • High collector current capability: IC and ICM • Higher efficie

文件：261.42 Kbytes 页数：13 Pages

NEXPERIA

安世

20 V, 3 A PNP low VCEsat (BISS) transistor

DESCRIPTION PNP low VCEsat transistor in a SOT89 plastic package. NPN complement: PBSS4320X. FEATURES • SOT89 (SC-62) package • Low collector-emitter saturation voltage VCEsat • High collector current capability: IC and ICM • Higher efficiency leading to less heat generation • Reduced prin

文件：203.22 Kbytes 页数：12 Pages

恩XP