丝印：ZH；Package：SOT23；20 V, 3 A PNP low VCEsat transistor

1. General description PNP low VCEsat transistor in in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4320T 2. Features and benefits • Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat • High collector current capabilit

文件：237.12 Kbytes 页数：10 Pages

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安世安世半导体(中国)有限公司

Single bipolar transistors

Nexperia

安世

Low VCEsat (BISS) transistors

文件：948.33 Kbytes 页数：12 Pages

PHI

飞利浦

20 V, 3 A PNP Low VCEsat (BISS) transistor

DESCRIPTION PNP low VCEsat transistor in a SOT89 plastic package. NPN complement: PBSS4320X. FEATURES • SOT89 (SC-62) package • Low collector-emitter saturation voltage VCEsat • High collector current capability: IC and ICM • Higher efficiency leading to less heat generation • Reduced prin

文件：121.64 Kbytes 页数：12 Pages

PHI

飞利浦