20 V, 3 A PNP Low VCEsat (BISS) transistor

DESCRIPTION PNP low VCEsat transistor in a SOT89 plastic package. NPN complement: PBSS4320X. FEATURES • SOT89 (SC-62) package • Low collector-emitter saturation voltage VCEsat • High collector current capability: IC and ICM • Higher efficiency leading to less heat generation • Reduced prin

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PHI

飞利浦

20 V, 3 A PNP low VCEsat (BISS) transistor

DESCRIPTION PNP low VCEsat transistor in a SOT89 plastic package. NPN complement: PBSS4320X. FEATURES • SOT89 (SC-62) package • Low collector-emitter saturation voltage VCEsat • High collector current capability: IC and ICM • Higher efficiency leading to less heat generation • Reduced prin

文件：203.22 Kbytes 页数：12 Pages

恩XP

丝印：S45；Package：SOT89；20 V, 3 A PNP low VCEsat (BISS) transistor

1. General description PNP low VCEsat transistor in a medium power flat lead SOT89 plastic package. NPN complement: PBSS4320X 2. Features and benefits • SOT89 (SC-62) package • Low collector-emitter saturation voltage VCEsat • High collector current capability: IC and ICM • Higher efficie

文件：261.42 Kbytes 页数：13 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

Low VCEsat (BISS) transistors

文件：948.33 Kbytes 页数：12 Pages

PHI

飞利浦

PNP low VCEsat (BISS) transistor 20 V, 3 A

文件：203.22 Kbytes 页数：12 Pages

PHI

飞利浦

20 V, 3 A PNP low VCEsat (BISS) transistor

PNP low VCEsat transistor in a medium power flat lead SOT89 plastic package.\n NPN complement: PBSS4320X • SOT89 (SC-62) package\n• Low collector-emitter saturation voltage VCEsat\n• High collector current capability: IC and ICM\n• Higher efficiency leading to less heat generation\n• Reduced printed-circuit board requirements.\n• AEC-Q101 qualified;

Nexperia

安世

Package：TO-243AA；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 20V 3A SOT89

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司