丝印：ZH*；Package：SOT-23；20 V, 3 A PNP low VCEsat (BISS) transistor

DESCRIPTION PNP low VCEsat transistor in a SOT23 plastic package. NPN complement: PBSS4320T. FEATURES • Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat • High collector current capability • High collector current gain • Improved efficiency due to reduced hea

文件：85.63 Kbytes 页数：10 Pages

PHI

飞利浦

丝印：ZH*；Package：SOT-23；20 V, 3 A PNP low VCEsat (BISS) transistor

DESCRIPTION PNP low VCEsat transistor in a SOT23 plastic package. NPN complement: PBSS4320T. FEATURES • Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat • High collector current capability • High collector current gain • Improved efficiency due to reduced hea

文件：178.49 Kbytes 页数：10 Pages

恩XP

Silicon PNP transistor in a SOT-23 Plastic Package

Descriptions Silicon PNP transistor in a SOT-23 Plastic Package. Features Low VCE(sat), high current. Applications General purpose switching and muting, LCD back-lighting, supply line switching circuits.

文件：653.03 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子

丝印：ZH；Package：SOT23；20 V, 3 A PNP low VCEsat transistor

1. General description PNP low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4320T 2. Features and benefits • Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat • High collector current capability

文件：1.16846 Mbytes 页数：11 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：ZH；Package：SOT23；20 V, 3 A PNP low VCEsat transistor

1. General description PNP low VCEsat transistor in in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4320T 2. Features and benefits • Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat • High collector current capabilit

文件：237.12 Kbytes 页数：10 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：ZH*；Package：SOT-23；PNP low VCEsat (BISS) transistor 20 V, 3 A

文件：178.49 Kbytes 页数：10 Pages

PHI

飞利浦

20 V, 3 A PNP low VCEsat (BISS) transistor

PNP low VCEsat transistor in a SOT23 plastic package. NPN complement: PBSS4320T. • Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat\n• High collector current capability\n• High collector current gain\n• Improved efficiency due to reduced heat generation.\n• AEC-Q101 qualified;

Nexperia

安世

三极管

BlueRocket

蓝箭电子

Single bipolar transistors

Nexperia

安世

Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 20V 2A TO236AB

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司