RCLAMP0524PATCT

Marking：P524；Package：DSON-10；Ultra Low Capacitance TVS Diode Array

Features Ultralowleakage:nAlevel Operatingvoltage:5.0V Lowclampingvoltage Complieswithfollowingstandards: –IEC61000-4-2(ESD)immunitytest Airdischarge:±15kV Contactdischarge:±8kV –IEC61000-4-4(EFT)40A(5/50ns) –IEC61000-4-5(EFT)5A(8/20ns) RoHSCompliant Appli

STP55NF

Marking：P55NF06；Package：TO-220；N-channel 60 V, 0.015 Ω, 50 A STripFET™ II Power MOSFET in D²PAK, TO-220 and TO-220FP packages

Description ThesePowerMOSFETshavebeendeveloped usingSTMicroelectronics’uniqueSTripFET process,whichisspecificallydesignedto minimizeinputcapacitanceandgatecharge.This rendersthedevicessuitableforuseasprimary switchinadvancedhigh-efficiencyisolatedDCDCconverter

STP55NF06

Marking：P55NF06FP；Package：TO-220；N-channel 60 V, 0.015 Ω, 50 A STripFET™ II Power MOSFET in D²PAK, TO-220 and TO-220FP packages

Description ThesePowerMOSFETshavebeendeveloped usingSTMicroelectronics’uniqueSTripFET process,whichisspecificallydesignedto minimizeinputcapacitanceandgatecharge.This rendersthedevicessuitableforuseasprimary switchinadvancedhigh-efficiencyisolatedDCDCconverter

STP5NK50Z

Marking：P5NK50Z；Package：TO-220；N-CHANNEL500V-1.22ohm-4.4ATO-220/FP/DPAK/IPAK/I2PAK Zener-Protected SuperMESH?줡ower MOSFET

DESCRIPTION TheSuperMESH™seriesisobtainedthroughanextremeoptimizationofST’swellestablishedstripbasedPowerMESH™layout.Inadditiontopushingon-resistancesignificantlydown,specialcareistakentoensureaverygooddv/dtcapabilityforthemostdemandingapplications.Suchse

STP5NK50Z

Marking：P5NK50Z；Package：TO-220；N-CHANNEL500V-1.22W-4.4ATO-220/FP/DPAK/IPAK/I2PAK Zener-Protected SuperMESH Power MOSFET

DESCRIPTION TheSuperMESH™seriesisobtainedthroughanextremeoptimizationofST’swellestablishedstripbasedPowerMESH™layout.Inadditiontopushingon-resistancesignificantlydown,specialcareistakentoensureaverygooddv/dtcapabilityforthemostdemandingapplications.Suchse

STP5NK50Z

Marking：P5NK50Z；Package：TO-220；N-channel 500 V, 1.22 Ω typ., 4.4 A SuperMESH™ Power MOSFETs in I2PAK, DPAK, TO‑220, TO‑220FP and IPAK packages

Features •100avalanchetested •Gatechargeminimized •Verylowintrinsiccapacitance •Zener-protected Applications •Switchingapplications Description Thesehigh-voltagedevicesareZener-protectedN-channelPowerMOSFETs developedusingtheSuperMESH™technologybySTMicroelect

STP5NK50ZFP

Marking：P5NK50ZFP；Package：TO-220FP；N-CHANNEL500V-1.22ohm-4.4ATO-220/FP/DPAK/IPAK/I2PAK Zener-Protected SuperMESH?줡ower MOSFET

DESCRIPTION TheSuperMESH™seriesisobtainedthroughanextremeoptimizationofST’swellestablishedstripbasedPowerMESH™layout.Inadditiontopushingon-resistancesignificantlydown,specialcareistakentoensureaverygooddv/dtcapabilityforthemostdemandingapplications.Suchse

STP5NK50ZFP

Marking：P5NK50ZFP；Package：TO-220FP；N-CHANNEL500V-1.22W-4.4ATO-220/FP/DPAK/IPAK/I2PAK Zener-Protected SuperMESH Power MOSFET

DESCRIPTION TheSuperMESH™seriesisobtainedthroughanextremeoptimizationofST’swellestablishedstripbasedPowerMESH™layout.Inadditiontopushingon-resistancesignificantlydown,specialcareistakentoensureaverygooddv/dtcapabilityforthemostdemandingapplications.Suchse

STP5NK50ZFP

Marking：P5NK50ZFP；Package：TO-220FP；N-channel 500 V, 1.22 Ω typ., 4.4 A SuperMESH™ Power MOSFETs in I2PAK, DPAK, TO‑220, TO‑220FP and IPAK packages

Features •100avalanchetested •Gatechargeminimized •Verylowintrinsiccapacitance •Zener-protected Applications •Switchingapplications Description Thesehigh-voltagedevicesareZener-protectedN-channelPowerMOSFETs developedusingtheSuperMESH™technologybySTMicroelect

TLC555CPS

Marking：P555；Package：SO；TLC555 LinCMOS™ Timer

1Features 1•Verylowpowerconsumption: –1-mWtypicalatVDD=5V •Capableofoperationinastablemode •CMOSoutputcapableofswingingrailtorail •Highoutputcurrentcapability –Sink:100-mAtypical –Source:10-mAtypical •OutputfullycompatiblewithCMOS,TTL,and MOS •