P5000SB

Marking：P50B；Package：DO-214AA；Thyristor Surge Suppressors (TSS)

FeaturesandBenefits Lowvoltageovershoot Lowon-statevoltage Doesnotdegradesurgecapabilityaftermultiplesurgeevents withinlimit Failsshortcircuitwhensurgedinexcessofratings LowCapacitance

P5000SC

Marking：P50C；Package：DO-214AA；Thyristor Surge Suppressors (TSS)

FeaturesandBenefits Lowvoltageovershoot Lowon-statevoltage Doesnotdegradesurgecapabilityaftermultiplesurgeevents withinlimit Failsshortcircuitwhensurgedinexcessofratings LowCapacitance

P5000TA

Marking：P50A；Package：DO-214AC；Thyristor Surge Suppressors (TSS)

FeaturesandBenefits Lowvoltageovershoot Lowon-statevoltage Doesnotdegradesurgecapabilityaftermultiplesurgeevents withinlimit Failsshortcircuitwhensurgedinexcessofratings LowCapacitance

P5000TB

Marking：P50B；Package：DO-214AC；Thyristor Surge Suppressors (TSS)

FeaturesandBenefits Excellentcapabilityofabsorbingtransientsurge Quickresponsetosurgevoltage(nsLevel) Eliminatesovervoltagecausedbyfastrisingtransients Moisturesensitivitylevel:Level1 Weight69mg(approximate) Nondegenerative ResponseTimeis

P5504

Marking：P5504EDG；Package：TO-252；P-Channel MOSFET

FEATURES Packagewithlowthermalresistance

P5504EDG

Marking：P5504EDG；Package：TO-252；P-Channel MOSFET

FEATURES Packagewithlowthermalresistance

PBSS5360Z

Marking：P5360Z；Package：SC-73；60 V, 3 A PNP low VCEsat (BISS) transistor

Generaldescription PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorinamediumpowerSOT223(SC-73)Surface-MountedDevice(SMD)plasticpackage. NPNcomplement:PBSS4360Z. Featuresandbenefits •Lowcollector-emittersaturationvoltageVCEsat •Highcollectorcurrentcapabili

PCSD93501QRYCTQ1

Marking：P501Q102；Package：WQFN；CSD93501-Q1 Synchronous Buck Monolothic Smart Power Stage

1Features •30ATDCcurrent,60Apeakoperatingcurrent capability •91.2peaksystemefficiencyat2MHz,5Vin,1Vo •High-frequencyoperation(upto2.2MHz) •Temperaturecompensatedbi-directionalcurrent sense •Analogtemperatureoutput •3.3-Vand5-VPWMsignalcompatible •Tri-st

PJP55N10A_T0_00001

Marking：P55N10A；Package：TO-220AB；100V N-Channel Enhancement Mode MOSFET

Features RDS(ON),VGS@10V,ID@20A

RCLAMP0524PATCT

Marking：P524；Package：DSON-10；Ultra Low Capacitance TVS Diode Array

Features Ultralowleakage:nAlevel Operatingvoltage:5.0V Lowclampingvoltage Complieswithfollowingstandards: –IEC61000-4-2(ESD)immunitytest Airdischarge:±15kV Contactdischarge:±8kV –IEC61000-4-4(EFT)40A(5/50ns) –IEC61000-4-5(EFT)5A(8/20ns) RoHSCompliant Appli