TLC555CPW

Marking：P555；Package：TSSOP；TLC555 LinCMOS™ Timer

1Features 1•Verylowpowerconsumption: –1-mWtypicalatVDD=5V •Capableofoperationinastablemode •CMOSoutputcapableofswingingrailtorail •Highoutputcurrentcapability –Sink:100-mAtypical –Source:10-mAtypical •OutputfullycompatiblewithCMOS,TTL,and MOS •

TLC555CPWR

Marking：P555；Package：TSSOP；TLC555 LinCMOS™ Timer

1Features 1•Verylowpowerconsumption: –1-mWtypicalatVDD=5V •Capableofoperationinastablemode •CMOSoutputcapableofswingingrailtorail •Highoutputcurrentcapability –Sink:100-mAtypical –Source:10-mAtypical •OutputfullycompatiblewithCMOS,TTL,and MOS •

TLC555CPWRG4

Marking：P555；Package：TSSOP；TLC555 LinCMOS™ Timer

1Features 1•Verylowpowerconsumption: –1-mWtypicalatVDD=5V •Capableofoperationinastablemode •CMOSoutputcapableofswingingrailtorail •Highoutputcurrentcapability –Sink:100-mAtypical –Source:10-mAtypical •OutputfullycompatiblewithCMOS,TTL,and MOS •

ULC0524P

Marking：P524；Package：DFN2510P10；Transient Voltage Suppressors for ESD Protection

Features 100WattsPeakPulsePowerperLine(tp=8/20μs) ProtectsFourHighSpeedLines Lowcapacitance:0.8pFtypica Lowoperatingvoltage:5V RoHSCompliant IEC61000-4-2(ESD)±15kV(airdischarge)，±8kV(contactdischarge); IEC61000-4-4(EFT)40A(5/50ηs) IEC61000-4-5(LIGHTING)4A(8/20

ULC0524PS

Marking：P524；Package：DFN2510P10；Transient Voltage Suppressors for ESD Protection

Features MoistureSensitivityLevel(MSL-1) AEC-Q101qualified 50WattsPeakPulsePowerperLine(tp=8/20μs) ProtectstwoorfourI/Olines Lowcapacitance:0.5pFtypical(I/OtoI/O) Workingvoltage:5V Lowleakagecurrent IEC61000-4-2(ESD):±15kV(airdischarge)±8kV(contactdischarge

ZVP4525E6

Marking：P52；Package：SOT-26；P-CHANNEL ENHANCEMENT MODE MOSFET

DESCRIPTION This250VenhancementmodeP-channelMOSFETprovidesuserswithacompetitivespecificationofferingefficientpowerhandlingcapability,highimpedanceandisfreefromthermalrunawayandthermallyinducedsecondarybreakdown.Applicationsbenefitingfromthisdeviceincludeavarie

ZVP4525E6

Marking：P52；Package：SOT-26；250V P-CHANNEL ENHANCEMENT MODE MOSFET

Description This250VenhancementmodeP-channelMOSFETprovidesuserswithacompetitivespecification.Itoffersefficientpowerhandlingcapability,highimpedanceandisfreefromthermalrunawayandthermallyinducedsecondarybreakdown.Applicationsbenefitingfromthisdeviceincludeavar

BCP53-10T

Marking：P5310T；Package：SOT223；80 V, 1 A PNP medium power transistors

BCP53-16T

Marking：P5316T；Package：SOT223；80 V, 1 A PNP medium power transistors

BCP56-10H

Marking：P5610H；Package：SC-73；80 V, 1 A NPN medium power transistors