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SVSP14N65KD2

Marking:P14N65KD2;Package:TO-262-3L;14A, 650V SUPER JUNCTION MOS POWER TRANSISTOR

DESCRIPTION SVSP14N65FJD/T/KD2isanN-channelenhancementmodehigh voltagepowerMOSFETsproducedusingSilan’sDPMOStechnology. Itachieveslowconductionlossandswitchinglosses.Itleadsthe designengineerstotheirpowerconverterswithhighefficiency,high powerdensity,andsuper

SILANSilan Microelectronics Joint-stock

士兰微杭州士兰微电子股份有限公司

SVSP14N65KD2

Marking:P14N65KD2;Package:TO-262-3L;14A, 650V SUPER JUNCTION MOS POWER TRANSISTOR

DESCRIPTION SVSP14N65FJD/T/KD2isanN-channelenhancementmodehigh voltagepowerMOSFETsproducedusingSilan’sDPMOStechnology. Itachieveslowconductionlossandswitchinglosses.Itleadsthe designengineerstotheirpowerconverterswithhighefficiency,high powerdensity,andsuper

SILANSilan Microelectronics Joint-stock

士兰微杭州士兰微电子股份有限公司

SVSP14N65KD2

Marking:P14N65KD2;Package:TO-262-3L;14A, 650V SUPER JUNCTION MOS POWER TRANSISTOR

DESCRIPTION SVSP14N65FJD/T/KD2isanN-channelenhancementmodehigh voltagepowerMOSFETsproducedusingSilan’sDPMOStechnology. Itachieveslowconductionlossandswitchinglosses.Itleadsthe designengineerstotheirpowerconverterswithhighefficiency,high powerdensity,andsuper

SILANSilan Microelectronics Joint-stock

士兰微杭州士兰微电子股份有限公司

SVSP14N65KD2

Marking:P14N65KD2;Package:TO-262-3L;14A, 650V SUPER JUNCTION MOS POWER TRANSISTOR

DESCRIPTION SVSP14N65FJD/T/KD2isanN-channelenhancementmodehigh voltagepowerMOSFETsproducedusingSilan’sDPMOStechnology. Itachieveslowconductionlossandswitchinglosses.Itleadsthe designengineerstotheirpowerconverterswithhighefficiency,high powerdensity,andsuper

SILANSilan Microelectronics Joint-stock

士兰微杭州士兰微电子股份有限公司

SVSP14N65TD2

Marking:P14N65TD2;Package:TO-220-3L;14A, 650V SUPER JUNCTION MOS POWER TRANSISTOR

DESCRIPTION SVSP14N65FJD/T/KD2isanN-channelenhancementmodehigh voltagepowerMOSFETsproducedusingSilan’sDPMOStechnology. Itachieveslowconductionlossandswitchinglosses.Itleadsthe designengineerstotheirpowerconverterswithhighefficiency,high powerdensity,andsuper

SILANSilan Microelectronics Joint-stock

士兰微杭州士兰微电子股份有限公司

SVSP14N65TD2

Marking:P14N65TD2;Package:TO-220-3L;14A, 650V SUPER JUNCTION MOS POWER TRANSISTOR

DESCRIPTION SVSP14N65FJD/T/KD2isanN-channelenhancementmodehigh voltagepowerMOSFETsproducedusingSilan’sDPMOStechnology. Itachieveslowconductionlossandswitchinglosses.Itleadsthe designengineerstotheirpowerconverterswithhighefficiency,high powerdensity,andsuper

SILANSilan Microelectronics Joint-stock

士兰微杭州士兰微电子股份有限公司

SVSP14N65TD2

Marking:P14N65TD2;Package:TO-220-3L;14A, 650V SUPER JUNCTION MOS POWER TRANSISTOR

DESCRIPTION SVSP14N65FJD/T/KD2isanN-channelenhancementmodehigh voltagepowerMOSFETsproducedusingSilan’sDPMOStechnology. Itachieveslowconductionlossandswitchinglosses.Itleadsthe designengineerstotheirpowerconverterswithhighefficiency,high powerdensity,andsuper

SILANSilan Microelectronics Joint-stock

士兰微杭州士兰微电子股份有限公司

SVSP14N65TD2

Marking:P14N65TD2;Package:TO-220-3L;14A, 650V SUPER JUNCTION MOS POWER TRANSISTOR

DESCRIPTION SVSP14N65FJD/T/KD2isanN-channelenhancementmodehigh voltagepowerMOSFETsproducedusingSilan’sDPMOStechnology. Itachieveslowconductionlossandswitchinglosses.Itleadsthe designengineerstotheirpowerconverterswithhighefficiency,high powerdensity,andsuper

SILANSilan Microelectronics Joint-stock

士兰微杭州士兰微电子股份有限公司

SVSP14N65TD2

Marking:P14N65TD2;Package:TO-220-3L;14A, 650V SUPER JUNCTION MOS POWER TRANSISTOR

DESCRIPTION SVSP14N65FJD/T/KD2isanN-channelenhancementmodehigh voltagepowerMOSFETsproducedusingSilan’sDPMOStechnology. Itachieveslowconductionlossandswitchinglosses.Itleadsthe designengineerstotheirpowerconverterswithhighefficiency,high powerdensity,andsuper

SILANSilan Microelectronics Joint-stock

士兰微杭州士兰微电子股份有限公司

TLP151A

Marking:P151A;Package:11-4L1S;Photocouplers GaAℓAs Infrared LED & Photo IC

Applications •TransistorInverters •MOSFETGateDrivers •IGBTGateDrivers General TheTLP151AisaphotocouplerinaSO6packagethatconsistsofaGaAℓAsinfraredlight-emittingdiode(LED) opticallycoupledtoanintegratedhigh-gain,high-speedphotodetectorICchip. Thephotodetec

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

详细参数

  • 型号:

    P1

  • 制造商:

    JST Manufacturing

  • 功能描述:

    X[u 3.3mm 0.25 to 1.65mm2 3.3~8.0mm

  • 功能描述:

    X[u 3.3mm 0.25 to 1.65mm2 3.3~8.0mm Bulk

供应商型号品牌批号封装库存备注价格
MPS
24+
QFN10
42307
进口MPS原装现货
询价
FAIRCHILD/仙童
23+
SOT-363
15000
全新原装现货,价格优势
询价
Apex
1824+
NA
16
加我QQ或微信咨询更多详细信息,
询价
HITACHI/日立
22+
SOT-423
25000
只有原装原装,支持BOM配单
询价
ENE
24+
LQFP144
37500
原装正品现货,价格有优势!
询价
DIODES/SEMTECH
24+
DFN2020
63200
一级代理/放心采购
询价
MICREL/麦瑞
24+
BGA
25500
授权代理直销,原厂原装现货,假一罚十,特价销售
询价
MICREL/麦瑞
2447
BGA
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
MICREL/麦瑞
24+
BGA
9600
原装现货,优势供应,支持实单!
询价
NA
23+
DFN
50000
全新原装正品现货,支持订货
询价
更多P1供应商 更新时间2025-6-28 8:36:00