型号：SVFP10N60CAFJH；Package：TO-220FJH-3L；10A, 600V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVFP10N60CAFJ/FJH is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistan

文件：291.74 Kbytes 页数：8 Pages

士兰微

型号：SVFP10N60CAFJH；Package：TO-220FJH-3L；10A, 600V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVFP10N60CAFJ/FJH is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistan

文件：291.72 Kbytes 页数：8 Pages

士兰微

型号：SVFP10N60CAFJH；Package：TO-220FJH-3L；10A, 600V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVFP10N60CAFJ/FJH is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistan

文件：291.71 Kbytes 页数：8 Pages

士兰微

型号：SVFP10N60CAFJ；Package：TO-220FJ-3L；10A, 600V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVFP10N60CAFJ/FJH is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistan

文件：291.74 Kbytes 页数：8 Pages

士兰微

型号：SVFP10N60CAFJ；Package：TO-220FJ-3L；10A, 600V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVFP10N60CAFJ/FJH is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistan

文件：291.75 Kbytes 页数：8 Pages

士兰微

型号：SVFP10N60CAFJ；Package：TO-220FJ-3L；10A, 600V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVFP10N60CAFJ/FJH is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistan

文件：291.72 Kbytes 页数：8 Pages

士兰微

型号：SVFP10N60CAFJ；Package：TO-220FJ-3L；10A, 600V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVFP10N60CAFJ/FJH is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistan

文件：291.71 Kbytes 页数：8 Pages

士兰微

型号：P10N60CA；10A, 600V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVFP10N60CAFJ/FJH is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistan

文件：291.71 Kbytes 页数：8 Pages

士兰微

型号：P10N60CAFJ；10A, 600V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVFP10N60CAFJ/FJH is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistan

文件：291.72 Kbytes 页数：8 Pages

士兰微