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PZT2222AT1G

Marking:P1F;Package:SOT-89;NPN Silicon Planar Epitaxial Transistor

ThisNPNSiliconEpitaxialtransistorisdesignedforuseinlinearandswitchingapplications.ThedeviceishousedintheSOT−223packagewhichisdesignedformediumpowersurfacemountapplications. Features •PNPComplementisPZT2907AT1 •TheSOT−223PackageCanbeSolderedUsingWaveor

ONSEMION Semiconductor

安森美半导体安森美半导体公司

RQ3P120BKFRA

Marking:P120BK;Package:HSMT8AG;Nch 100V 12A Power MOSFET

Features 1)Smallhigh-poweredpackagereduces mountingareaby64%atamaximum 2)Realizationofhighmountingreliability byoriginalterminalandplatingtreatment 3)AEC-Q101Qualified Application ADAS/Info./Lighting/Body

ROHMRohm

罗姆罗姆半导体集团

STP10NK80Z

Marking:P10NK80Z;Package:TO-220;N-CHANNEL 800V - 0.78ohm - 9A TO-220/TO-220FP/TO-247 Zener-Protected SuperMESH?줡ower MOSFET

Description TheSuperMESH™seriesisobtainedthroughanextremeoptimizationofST’swellestablished strip-basedPowerMESH™layout.Inadditiontopushingon-resistancesignificantlydown,special careistakentoensureaverygooddv/dtcapabilityforthemostdemandingapplications.

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STP10NK80Z

Marking:P10NK80Z;Package:TO-220;N-channel 800 V, 0.78 Ω, 9 A Zener-protected SuperMESH™ Power MOSFETs in TO-220, TO-220FP and TO-247 packages

Description ThesedevicesareN-channelZener-protected PowerMOSFETsdevelopedusing STMicroelectronics'SuperMESH™technology, achievedthroughoptimizationofST'swell establishedstrip-basedPowerMESH™layout.In additiontoasignificantreductioninonresistance,thisdeviceisdesign

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STP10NK80ZFP

Marking:P10NK80ZFP;Package:TO-220FP;N-CHANNEL 800V - 0.78ohm - 9A TO-220/TO-220FP/TO-247 Zener-Protected SuperMESH?줡ower MOSFET

Description TheSuperMESH™seriesisobtainedthroughanextremeoptimizationofST’swellestablished strip-basedPowerMESH™layout.Inadditiontopushingon-resistancesignificantlydown,special careistakentoensureaverygooddv/dtcapabilityforthemostdemandingapplications.

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STP10NK80ZFP

Marking:P10NK80ZFP;Package:TO-220FP;N-channel 800 V, 0.78 Ω, 9 A Zener-protected SuperMESH™ Power MOSFETs in TO-220, TO-220FP and TO-247 packages

Description ThesedevicesareN-channelZener-protected PowerMOSFETsdevelopedusing STMicroelectronics'SuperMESH™technology, achievedthroughoptimizationofST'swell establishedstrip-basedPowerMESH™layout.In additiontoasignificantreductioninonresistance,thisdeviceisdesign

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STP11NM80

Marking:P11NM80;Package:TO-220;N-channel 800 V, 0.35 Ω, 11 A MDmesh™ Power MOSFET in D²PAK, TO-220FP, I²PAK, TO-220, TO-247

Features ■Lowinputcapacitanceandgatecharge ■Lowgateinputresistance ■BestRDS(on)*Qgintheindustry Applications ■Switchingapplications Description TheseN-channelPowerMOSFETsare developedusingSTMicroelectronics' revolutionaryMDmesh™technology,which associatesth

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STP12NM50

Marking:P12NM50;Package:TO-220;N-CHANNEL 500V - 0.3W - 12A TO-220/TO-220FP/I PAK MDmesh]Power MOSFET

Description TheMDmesh™isanewrevolutionaryMOSFETtechnologythatassociatestheMultipleDrainprocesswiththeCompany’sPowerMESH™horizontallayout.Theresultingproducthasanoutstandinglowon-resistance,impressivelyhighdv/dtandexcellentavalanchecharacteristics.Theadoptionof

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STP12NM50FP

Marking:P12NM50FP;Package:TO-220FP;N-CHANNEL 500V - 0.3W - 12A TO-220/TO-220FP/I PAK MDmesh]Power MOSFET

Description TheMDmesh™isanewrevolutionaryMOSFETtechnologythatassociatestheMultipleDrainprocesswiththeCompany’sPowerMESH™horizontallayout.Theresultingproducthasanoutstandinglowon-resistance,impressivelyhighdv/dtandexcellentavalanchecharacteristics.Theadoptionof

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STP1806

Marking:P1806;Package:TO-220;N-CHANNEL 60V - 0.015 - 50A TO-220 STripFET™ POWER MOSFET

■TYPICALRDS(on)=0.015 ■EXCEPTIONALdv/dtCAPABILITY ■100AVALANCHETESTED DESCRIPTION ThisPowerMOSFETisthelatestdevelopmentof STMicroelectronisuniqueSingleFeatureSize™ strip-basedprocess.Theresultingtransistor showsextremelyhighpackingdensityforlowonresistance

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

详细参数

  • 型号:

    P1

  • 制造商:

    JST Manufacturing

  • 功能描述:

    X[u 3.3mm 0.25 to 1.65mm2 3.3~8.0mm

  • 功能描述:

    X[u 3.3mm 0.25 to 1.65mm2 3.3~8.0mm Bulk

供应商型号品牌批号封装库存备注价格
MPS
24+
QFN10
42307
进口MPS原装现货
询价
FAIRCHILD/仙童
23+
SOT-363
15000
全新原装现货,价格优势
询价
Apex
1824+
NA
16
加我QQ或微信咨询更多详细信息,
询价
HITACHI/日立
22+
SOT-423
25000
只有原装原装,支持BOM配单
询价
ENE
24+
LQFP144
37500
原装正品现货,价格有优势!
询价
DIODES/SEMTECH
24+
DFN2020
63200
一级代理/放心采购
询价
MICREL/麦瑞
24+
BGA
25500
授权代理直销,原厂原装现货,假一罚十,特价销售
询价
MICREL/麦瑞
2447
BGA
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
MICREL/麦瑞
24+
BGA
9600
原装现货,优势供应,支持实单!
询价
NA
23+
DFN
50000
全新原装正品现货,支持订货
询价
更多P1供应商 更新时间2025-6-27 16:45:00