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零件编号	下载订购	功能描述/丝印	制造商上传企业	LOGO
SVFP10N60CAFJ	文件：291.74 Kbytes Page：8 Pages	Marking：P10N60CAFJ；Package：TO-220FJ-3L；10A, 600V N-CHANNEL MOSFET GENERALDESCRIPTION SVFP10N60CAFJ/FJHisanN-channelenhancementmodepower MOSfieldeffecttransistorwhichisproducedusingSilanproprietary F-CellTMhigh-voltageplanarVDMOStechnology.Theimproved processandcellstructurehavebeenespeciallytailoredtominimize on-stateresistan	SILANSilan Microelectronics Joint-stock 士兰微杭州士兰微电子股份有限公司	SILAN
SVFP10N60CAFJ	文件：291.75 Kbytes Page：8 Pages	Marking：P10N60CAFJ；Package：TO-220FJ-3L；10A, 600V N-CHANNEL MOSFET GENERALDESCRIPTION SVFP10N60CAFJ/FJHisanN-channelenhancementmodepower MOSfieldeffecttransistorwhichisproducedusingSilanproprietary F-CellTMhigh-voltageplanarVDMOStechnology.Theimproved processandcellstructurehavebeenespeciallytailoredtominimize on-stateresistan	SILANSilan Microelectronics Joint-stock 士兰微杭州士兰微电子股份有限公司	SILAN
SVFP10N60CAFJ	文件：291.72 Kbytes Page：8 Pages	Marking：P10N60CAFJ；Package：TO-220FJ-3L；10A, 600V N-CHANNEL MOSFET GENERALDESCRIPTION SVFP10N60CAFJ/FJHisanN-channelenhancementmodepower MOSfieldeffecttransistorwhichisproducedusingSilanproprietary F-CellTMhigh-voltageplanarVDMOStechnology.Theimproved processandcellstructurehavebeenespeciallytailoredtominimize on-stateresistan	SILANSilan Microelectronics Joint-stock 士兰微杭州士兰微电子股份有限公司	SILAN
SVFP10N60CAFJ	文件：291.71 Kbytes Page：8 Pages	Marking：P10N60CAFJ；Package：TO-220FJ-3L；10A, 600V N-CHANNEL MOSFET GENERALDESCRIPTION SVFP10N60CAFJ/FJHisanN-channelenhancementmodepower MOSfieldeffecttransistorwhichisproducedusingSilanproprietary F-CellTMhigh-voltageplanarVDMOStechnology.Theimproved processandcellstructurehavebeenespeciallytailoredtominimize on-stateresistan	SILANSilan Microelectronics Joint-stock 士兰微杭州士兰微电子股份有限公司	SILAN
SVFP10N60CAFJH	文件：291.74 Kbytes Page：8 Pages	Marking：P10N60CA；Package：TO-220FJH-3L；10A, 600V N-CHANNEL MOSFET GENERALDESCRIPTION SVFP10N60CAFJ/FJHisanN-channelenhancementmodepower MOSfieldeffecttransistorwhichisproducedusingSilanproprietary F-CellTMhigh-voltageplanarVDMOStechnology.Theimproved processandcellstructurehavebeenespeciallytailoredtominimize on-stateresistan	SILANSilan Microelectronics Joint-stock 士兰微杭州士兰微电子股份有限公司	SILAN
SVFP10N60CAFJH	文件：291.72 Kbytes Page：8 Pages	Marking：P10N60CA；Package：TO-220FJH-3L；10A, 600V N-CHANNEL MOSFET GENERALDESCRIPTION SVFP10N60CAFJ/FJHisanN-channelenhancementmodepower MOSfieldeffecttransistorwhichisproducedusingSilanproprietary F-CellTMhigh-voltageplanarVDMOStechnology.Theimproved processandcellstructurehavebeenespeciallytailoredtominimize on-stateresistan	SILANSilan Microelectronics Joint-stock 士兰微杭州士兰微电子股份有限公司	SILAN
SVFP10N60CAFJH	文件：291.71 Kbytes Page：8 Pages	Marking：P10N60CA；Package：TO-220FJH-3L；10A, 600V N-CHANNEL MOSFET GENERALDESCRIPTION SVFP10N60CAFJ/FJHisanN-channelenhancementmodepower MOSfieldeffecttransistorwhichisproducedusingSilanproprietary F-CellTMhigh-voltageplanarVDMOStechnology.Theimproved processandcellstructurehavebeenespeciallytailoredtominimize on-stateresistan	SILANSilan Microelectronics Joint-stock 士兰微杭州士兰微电子股份有限公司	SILAN
SVSP11N65DD2TR	文件：413.58 Kbytes Page：10 Pages	Marking：P11N65D；Package：TO-252-2L；11A, 650V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP11N65D/F/S/FJD/K/TD2isanN-channelenhancementmode highvoltagepowerMOSFETsproducedusingSilan’ssuperjunction MOStechnology.Itachieveslowconductionlossandswitching losses.Itleadsthedesignengineerstotheirpowerconverterswith highefficiency,highpower	SILANSilan Microelectronics Joint-stock 士兰微杭州士兰微电子股份有限公司	SILAN
SVSP11N65FD2	文件：413.58 Kbytes Page：10 Pages	Marking：P11N65FD2；Package：TO-220F-3L；11A, 650V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP11N65D/F/S/FJD/K/TD2isanN-channelenhancementmode highvoltagepowerMOSFETsproducedusingSilan’ssuperjunction MOStechnology.Itachieveslowconductionlossandswitching losses.Itleadsthedesignengineerstotheirpowerconverterswith highefficiency,highpower	SILANSilan Microelectronics Joint-stock 士兰微杭州士兰微电子股份有限公司	SILAN
SVSP11N65FJDD2	文件：413.58 Kbytes Page：10 Pages	Marking：P11N65FJD；Package：TO-220FJD-3L；11A, 650V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP11N65D/F/S/FJD/K/TD2isanN-channelenhancementmode highvoltagepowerMOSFETsproducedusingSilan’ssuperjunction MOStechnology.Itachieveslowconductionlossandswitching losses.Itleadsthedesignengineerstotheirpowerconverterswith highefficiency,highpower	SILANSilan Microelectronics Joint-stock 士兰微杭州士兰微电子股份有限公司	SILAN

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详细参数

型号：
P1
制造商：
JST Manufacturing
功能描述：
X[u 3.3mm 0.25 to 1.65mm2 3.3~8.0mm
功能描述：
X[u 3.3mm 0.25 to 1.65mm2 3.3~8.0mm Bulk

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市英科美电子有限公司	P1	MPS	24+	QFN10	42307	进口MPS原装现货	询价
深圳市拓亿芯电子有限公司	P1	FAIRCHILD/仙童	23+	SOT-363	15000	全新原装现货,价格优势	询价
深圳市易讯博科技有限公司	P1	Apex	1824+	NA	16	加我QQ或微信咨询更多详细信息,	询价
深圳市创新迹电子有限公司	P1	HITACHI/日立	22+	SOT-423	25000	只有原装原装,支持BOM配单	询价
深圳市科达星科技有限公司	P1	ENE	24+	LQFP144	37500	原装正品现货,价格有优势!	询价
瀚佳科技(深圳)有限公司	P3	DIODES/SEMTECH	24+	DFN2020	63200	一级代理/放心采购	询价
深圳市兴灿科技有限公司	P3	MICREL/麦瑞	24+	BGA	25500	授权代理直销,原厂原装现货,假一罚十,特价销售	询价
艾睿国际（香港）有限公司	P3	MICREL/麦瑞	2447	BGA	100500	一级代理专营品牌!原装正品,优势现货,长期排单到货	询价
深圳市宇创芯科技有限公司	P3	MICREL/麦瑞	24+	BGA	9600	原装现货,优势供应,支持实单!	询价
深圳市威尔健半导体有限公司	P3	NA	23+	DFN	50000	全新原装正品现货,支持订货	询价

更多P1供应商更新时间2025-6-28 8:36:00

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