DDTA143FE-7-F

Marking：P10；Package：SOT523；PNP PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features -EpitaxialPlanarDieConstruction -ComplementaryNPNTypesAvailable(DDTC) -Built-InBiasingResistors,R1R2 -TotallyLead-Free&FullyRoHSCompliant(Notes1&2) -HalogenandAntimonyFreeGreenDevice(Note3) -QualifiedtoAEC-Q101StandardsforHighReliability

DMP1012USS-13

Marking：P1012US；Package：SO-8；12V P-CHANNEL ENHANCEMENT MODE MOSFET

FeaturesandBenefits LowOn-Resistance LowInputCapacitance FastSwitchingSpeed TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) DescriptionandApplications ThisMOSFETisdesignedtominimizetheon-stateresistance

PJP100P03_T0_00001

Marking：P100P03；Package：TO-220AB；30V P-Channel Enhancement Mode MOSFET

Features RDS(ON),VGS@-10V,ID@-20A

STP10NK80Z

Marking：P10NK80Z；Package：TO-220；N-CHANNEL 800V - 0.78ohm - 9A TO-220/TO-220FP/TO-247 Zener-Protected SuperMESH?줡ower MOSFET

Description TheSuperMESH™seriesisobtainedthroughanextremeoptimizationofST’swellestablished strip-basedPowerMESH™layout.Inadditiontopushingon-resistancesignificantlydown,special careistakentoensureaverygooddv/dtcapabilityforthemostdemandingapplications.

STP10NK80Z

Marking：P10NK80Z；Package：TO-220；N-channel 800 V, 0.78 Ω, 9 A Zener-protected SuperMESH™ Power MOSFETs in TO-220, TO-220FP and TO-247 packages

Description ThesedevicesareN-channelZener-protected PowerMOSFETsdevelopedusing STMicroelectronics'SuperMESH™technology, achievedthroughoptimizationofST'swell establishedstrip-basedPowerMESH™layout.In additiontoasignificantreductioninonresistance,thisdeviceisdesign

STP10NK80ZFP

Marking：P10NK80ZFP；Package：TO-220FP；N-CHANNEL 800V - 0.78ohm - 9A TO-220/TO-220FP/TO-247 Zener-Protected SuperMESH?줡ower MOSFET

Description TheSuperMESH™seriesisobtainedthroughanextremeoptimizationofST’swellestablished strip-basedPowerMESH™layout.Inadditiontopushingon-resistancesignificantlydown,special careistakentoensureaverygooddv/dtcapabilityforthemostdemandingapplications.

STP10NK80ZFP

Marking：P10NK80ZFP；Package：TO-220FP；N-channel 800 V, 0.78 Ω, 9 A Zener-protected SuperMESH™ Power MOSFETs in TO-220, TO-220FP and TO-247 packages

Description ThesedevicesareN-channelZener-protected PowerMOSFETsdevelopedusing STMicroelectronics'SuperMESH™technology, achievedthroughoptimizationofST'swell establishedstrip-basedPowerMESH™layout.In additiontoasignificantreductioninonresistance,thisdeviceisdesign

SVFP10N60CAFJ

Marking：P10N60CAFJ；Package：TO-220FJ-3L；10A, 600V N-CHANNEL MOSFET

GENERALDESCRIPTION SVFP10N60CAFJ/FJHisanN-channelenhancementmodepower MOSfieldeffecttransistorwhichisproducedusingSilanproprietary F-CellTMhigh-voltageplanarVDMOStechnology.Theimproved processandcellstructurehavebeenespeciallytailoredtominimize on-stateresistan

SVFP10N60CAFJ

Marking：P10N60CAFJ；Package：TO-220FJ-3L；10A, 600V N-CHANNEL MOSFET

GENERALDESCRIPTION SVFP10N60CAFJ/FJHisanN-channelenhancementmodepower MOSfieldeffecttransistorwhichisproducedusingSilanproprietary F-CellTMhigh-voltageplanarVDMOStechnology.Theimproved processandcellstructurehavebeenespeciallytailoredtominimize on-stateresistan

SVFP10N60CAFJ

Marking：P10N60CAFJ；Package：TO-220FJ-3L；10A, 600V N-CHANNEL MOSFET

GENERALDESCRIPTION SVFP10N60CAFJ/FJHisanN-channelenhancementmodepower MOSfieldeffecttransistorwhichisproducedusingSilanproprietary F-CellTMhigh-voltageplanarVDMOStechnology.Theimproved processandcellstructurehavebeenespeciallytailoredtominimize on-stateresistan