首页 >P-302-CCE>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
300SeriesDeepBracket(DB) | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | etc2 | ||
NECLCD30ProfessionalDesktopDisplay | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
3.0ABRIDGERECTIFIER Features •HighCurrentCapability •SurgeOverloadRatingto50APeak •HighCaseDielectricStrengthof1500V •IdealforPrintedCircuitBoardApplication •ULListedUnderRecognizedComponentIndex,FileNumberE94661 | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
40V,4ANPNlowVCEsat(BISS)transistor 1.1Generaldescription NPNlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaSOT457(SC-74) smallSurface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBSS302PD. 1.2Features *Ultralowcollector-emittersaturationvoltageVCEsat *4Acontinuouscollectorcurrentc | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
20V,5.3ANPNlowVCEsat(BISS)transistor Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
20V,5.8ANPNlowVCEsat(BISS)transistor Generaldescription NPNlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaSOT223(SC-73)smallSurface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBSS302PZ. Features ■Lowcollector-emittersaturationvoltageVCEsat ■HighcollectorcurrentcapabilityICandICM ■Hig | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
20V,5.8ANPNlowVCEsattransistor 1.Generaldescription NPNlowVCEsattransistorinaSOT223(SC-73)smallSurface-MountedDevice(SMD)plastic package. PNPcomplement:PBSS302PZ 2.Featuresandbenefits •Lowcollector-emittersaturationvoltageVCEsat •HighcollectorcurrentcapabilityICandICM •Highcollectorcur | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
20V,5.8ANPNlowVCEsattransistor 1.Generaldescription NPNlowVCEsattransistorinaSOT223(SC-73)smallSurface-MountedDevice(SMD)plastic package. 2.Featuresandbenefits •Lowcollector-emittersaturationvoltageVCEsat •HighcollectorcurrentcapabilityICandICM •Highcollectorcurrentgain(hFE)athighIC | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
40VPNPlowVCEsat(BISS)transistor Generaldescription PNPlowVCEsatBreakthroughinSmallSignal(BISS)singlebipolarPNPtransistorinaSOT457(SC-74)SMDplasticpackage. NPNcomplement:PBSS302ND Features ■Ultralowcollector-emittersaturationvoltageVCEsat ■4AcontinuouscollectorcurrentcapabilityIC(DC) ■Up | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
40V,4APNPlowVCEsat(BISS)transistor 1.1Generaldescription PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaSOT457(SC-74) smallSurface-MountedDevice(SMD)plasticpackage. NPNcomplement:PBSS302ND. 1.2Features *Ultralowcollector-emittersaturationvoltageVCEsat *4Acontinuouscollectorcurrentc | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA |
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