40 V, 4 A NPN low VCEsat (BISS) transistor

General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS302PD. Features ■ Ultra low collector-emitter saturation voltage VCEsat ■ 4 A continuous collector current capability I

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丝印：C7；Package：SC-74；40 V, 4 A NPN low VCEsat (BISS) transistor

1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS302PD. 1.2 Features * Ultra low collector-emitter saturation voltage VCEsat * 4 A continuous collector current c

文件：258.17 Kbytes 页数：15 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

40 V, 4 A NPN low VCEsat (BISS) transistor

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package.\n PNP complement: PBSS302PD. • Ultra low collector-emitter saturation voltage VCEsat\n• 4 A continuous collector current capability IC\n• Up to 15 A peak current\n• Very low collector-emitter saturation resistance\n• High efficiency due to less heat generation\n• AEC-Q101 qualified;

Nexperia

安世

40 V, 4 A NPN low VCEsat transistor

NPN low VCEsat transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. • Ultra low collector-emitter saturation voltage VCEsat\n• 4 A continuous collector current capability IC\n• Up to 15 A peak current\n• Very low collector-emitter saturation resistance\n• High efficiency due to less heat generation\n• Qualified according to AEC-Q101 and recommended for use in automo;

Nexperia

安世

Package：SC-74，SOT-457；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 40V 4A 6TSOP

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

Package：SC-74，SOT-457；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 40V 4A 6TSOP

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司