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PBSS302ND

Marking:C7;Package:SC-74;40 V, 4 A NPN low VCEsat (BISS) transistor

1.1Generaldescription NPNlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaSOT457(SC-74) smallSurface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBSS302PD. 1.2Features *Ultralowcollector-emittersaturationvoltageVCEsat *4Acontinuouscollectorcurrentc

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PBSS302ND,115

Package:SC-74,SOT-457;包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 类别:分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 描述:TRANS NPN 40V 4A 6TSOP

Nexperia USA Inc.

Nexperia USA Inc.

Nexperia USA Inc.

PBSS302NDH

Package:SC-74,SOT-457;包装:卷带(TR) 类别:分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 描述:TRANS NPN 40V 4A 6TSOP

Nexperia USA Inc.

Nexperia USA Inc.

Nexperia USA Inc.

PBSS302NX

20V,5.3ANPNlowVCEsat(BISS)transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PBSS302NZ

20V,5.8ANPNlowVCEsat(BISS)transistor

Generaldescription NPNlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaSOT223(SC-73)smallSurface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBSS302PZ. Features ■Lowcollector-emittersaturationvoltageVCEsat ■HighcollectorcurrentcapabilityICandICM ■Hig

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

PBSS302NZ

20V,5.8ANPNlowVCEsattransistor

1.Generaldescription NPNlowVCEsattransistorinaSOT223(SC-73)smallSurface-MountedDevice(SMD)plastic package. PNPcomplement:PBSS302PZ 2.Featuresandbenefits •Lowcollector-emittersaturationvoltageVCEsat •HighcollectorcurrentcapabilityICandICM •Highcollectorcur

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PBSS302NZ-Q

20V,5.8ANPNlowVCEsattransistor

1.Generaldescription NPNlowVCEsattransistorinaSOT223(SC-73)smallSurface-MountedDevice(SMD)plastic package. 2.Featuresandbenefits •Lowcollector-emittersaturationvoltageVCEsat •HighcollectorcurrentcapabilityICandICM •Highcollectorcurrentgain(hFE)athighIC

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PBSS302PD

40VPNPlowVCEsat(BISS)transistor

Generaldescription PNPlowVCEsatBreakthroughinSmallSignal(BISS)singlebipolarPNPtransistorinaSOT457(SC-74)SMDplasticpackage. NPNcomplement:PBSS302ND Features ■Ultralowcollector-emittersaturationvoltageVCEsat ■4AcontinuouscollectorcurrentcapabilityIC(DC) ■Up

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

PBSS302PD

40V,4APNPlowVCEsat(BISS)transistor

1.1Generaldescription PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaSOT457(SC-74) smallSurface-MountedDevice(SMD)plasticpackage. NPNcomplement:PBSS302ND. 1.2Features *Ultralowcollector-emittersaturationvoltageVCEsat *4Acontinuouscollectorcurrentc

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PBSS302PD-Q

40V,4APNPlowVCEsattransistor

1.Generaldescription PNPlowVCEsattransistorinaSOT457(SC-74)smallSurface-MountedDevice(SMD)plastic package. NPNcomplement:PBSS302ND-Q 2.Featuresandbenefits •Ultralowcollector-emittersaturationvoltageVCEsat •4AcontinuouscollectorcurrentcapabilityIC •Upto15

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

详细参数

  • 型号:

    PBSS302ND

  • 功能描述:

    两极晶体管 - BJT NPN 40V 4A LOW SAT

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    PNP 集电极—基极电压

  • VCBO:

    集电极—发射极最大电压

  • VCEO:

    - 40 V 发射极 - 基极电压

  • VEBO:

    - 6 V

  • 增益带宽产品fT:

    直流集电极/Base Gain hfe

  • Min:

    100 A

  • 安装风格:

    SMD/SMT

  • 封装/箱体:

    PowerFLAT 2 x 2

供应商型号品牌批号封装库存备注价格
恩XP
24+
6-TSOP
115
询价
原装
25+23+
18807
绝对原装正品全新进口深圳现货
询价
NEXPERIA/安世
2447
SOT457
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
恩XP
23+
SOT-163
50000
全新原装正品现货,支持订货
询价
恩XP
21+
6000
只做原装正品,卖元器件不赚钱交个朋友
询价
恩XP
15+
SOT-23
3000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
恩XP
22+
SOT-163
20000
原装现货,实单支持
询价
NEXPERIA
22+
NA
30000
原装正品支持实单
询价
恩XP
25+
NA
880000
明嘉莱只做原装正品现货
询价
恩XP
24+
NA/
4365
原厂直销,现货供应,账期支持!
询价
更多PBSS302ND供应商 更新时间2025-7-22 15:30:00