40 V, 4 A NPN low VCEsat transistor

NPN low VCEsat transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. • Ultra low collector-emitter saturation voltage VCEsat\n• 4 A continuous collector current capability IC\n• Up to 15 A peak current\n• Very low collector-emitter saturation resistance\n• High efficiency due to less heat generation\n• Qualified according to AEC-Q101 and recommended for use in automo;

Nexperia

安世

20 V, 5.3 A NPN low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

文件：310.75 Kbytes 页数：16 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

20 V, 5.8 A NPN low VCEsat (BISS) transistor

General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS302PZ. Features ■ Low collector-emitter saturation voltage VCEsat ■ High collector current capability IC and ICM ■ Hig

文件：102.57 Kbytes 页数：14 Pages

PHI

飞利浦

SCREW TYPE SERIES

文件：326.51 Kbytes 页数：1 Pages

DBLECTRO

Indicates Phase Presence

文件：98.77 Kbytes 页数：1 Pages

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Extra taps upon request

文件：101.35 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世