MOSFET - Power, Single P-Channel -40 V, 9.5 m, -77 A

Features • Small Footprint for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVMFWS9D6P04M8L ï Wettable Flanks Product • AECïQ101 Qualified and PPAP Capable • These Devices are PbïFree, Halogen Free/BFRïFree and are RoHS Compliant

文件：136.95 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：V9D6PL；Package：DFNW5；MOSFET - Power, Single P-Channel -40 V, 9.5 m, -77 A

Features • Small Footprint for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVMFWS9D6P04M8L ï Wettable Flanks Product • AECïQ101 Qualified and PPAP Capable • These Devices are PbïFree, Halogen Free/BFRïFree and are RoHS Compliant

文件：136.95 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：410NDC；Package：DFN8；MOSFET - Power, DUAL COOL N-Channel, DFN8 5x6 40 V, 0.87 m, 310 A

Features • Advanced Dual−sided Cooled Packaging • Small Footprint (5x6 mm) for Compact Design • Ulra Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant • MSL1 R

文件：386.85 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：410LVC；Package：DFN8；MOSFET - Power, DUAL COOL N-Channel, DFN8 5x6 40 V, 0.85 m, 316 A

Features • Advanced Dual−sided Cooled Packaging • Small Footprint (5x6 mm) for Compact Design • Ulra Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant • MSL1 R

文件：498.78 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

丝印：612VDC；Package：DFN8；MOSFET - Power, DUAL COOL N-Channel DFN8 5x6 60 V, 1.5 m, 224 A

Features • Advanced Dual−sided Cooled Packaging • Ulra Low RDS(on) • MSL1 Robust Packaging Design • AEC−Q101 Qualified Typical Applications • Orring FET/Load Switching • Synchronous Rectifier • DC−DC Conversion

文件：369.86 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：W6D1N8；Package：DFN5；Power MOSFET 80 V, 5.5 m, 89 A, Single N?묬hannel

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFSW6D1N08H − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Hal

文件：145.63 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

丝印：20DN6W；Package：SO8FL；MOSFET - Power, Dual N-Channel, DUAL SO8FL 60 V, 20.3 m, 27 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFWD020N06C − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Hal

文件：254.21 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：24DN6W；Package：DFN8；MOSFET ??Power, Dual N-Channel, SO-8FL 60 V, 22.6 m, 24 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFWD024N06C − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Hal

文件：255.85 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：30DN6W；Package：SO-8FL；MOSFET - Power, Dual N-Channel, DUAL SO-8FL 60 V, 29.7 m, 19 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFWD030N06C − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Ha

文件：253.94 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET ??Power, Dual N-Channel 100 V, 39 m, 21 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • NVMFWD040N10MCL − Wettable Flank Products • These Devices are Pb−Free, Halogen Free/BFR Free, Berylliu

文件：218.66 Kbytes 页数：7 Pages

ONSEMI

安森美半导体