丝印：W6D1N8；Package：DFN5；Power MOSFET 80 V, 5.5 m, 89 A, Single N?묬hannel

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFSW6D1N08H − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Hal

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