Power MOSFET 30 V, 117 A, Single N?묬hannel, DPAK/IPAK

Power MOSFET 30 V, 117 A, Single N−Channel, DPAK/IPAK Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • AEC Q101 Qualified − NVD4804N • These Devices are Pb−Free and are RoHS Compliant App

文件：92.7 Kbytes 页数：8 Pages

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安森美半导体

MOSFET – Power, Single, N-Channel, DPAK/IPAK 30 V, 88 A

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable

文件：250.3 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 95A@ TC=25℃ ·Drain Source Voltage -VDSS=30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 5mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：260.2 Kbytes 页数：2 Pages

ISC

无锡固电

MOSFET – Power, Single, N-Channel, DPAK/IPAK 30 V, 88 A

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable

文件：250.3 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 79A@ TC=25℃ ·Drain Source Voltage -VDSS=30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 6.0mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：261.32 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET 30 V, 76 A, Single N?묬hannel, DPAK/IPAK

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • AEC−Q101 Qualified and PPAP Capable − NVD4806N • These Devices are Pb−Free and are RoHS Compliant Applications • CPU Power Delivery • DC

文件：119.95 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

30 V, 76 A, Single N?묬hannel, DPAK/IPAK

Power MOSFET 30 V, 76 A, Single N−Channel, DPAK/IPAK Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • AEC−Q101 Qualified and PPAP Capable − NVD4806N • These Devices are Pb−Free and are RoHS

文件：123.85 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Power MOSFET 30 V, 76 A, Single N?묬hannel, DPAK/IPAK

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • AEC−Q101 Qualified and PPAP Capable − NVD4806N • These Devices are Pb−Free and are RoHS Compliant Applications • CPU Power Delivery • DC

文件：119.95 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

30 V, 76 A, Single N?묬hannel, DPAK/IPAK

Power MOSFET 30 V, 76 A, Single N−Channel, DPAK/IPAK Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • AEC−Q101 Qualified and PPAP Capable − NVD4806N • These Devices are Pb−Free and are RoHS

文件：123.85 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Power MOSFET 30 V, 63 A, Single N?묬hannel, DPAK/IPAK

MOSFET – Power, Single, N-Channel, DPAK/IPAK 30 V, 63 A Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • NVD Prefix for Automotive and Other Applications Requiring Unique Site and Contr

文件：167.31 Kbytes 页数：8 Pages

ONSEMI

安森美半导体