30 V, 76 A, Single N?묬hannel, DPAK/IPAK

Power MOSFET 30 V, 76 A, Single N−Channel, DPAK/IPAK Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • AEC−Q101 Qualified and PPAP Capable − NVD4806N • These Devices are Pb−Free and are RoHS

文件：123.85 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Power MOSFET 30 V, 76 A, Single N?묬hannel, DPAK/IPAK

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • AEC−Q101 Qualified and PPAP Capable − NVD4806N • These Devices are Pb−Free and are RoHS Compliant Applications • CPU Power Delivery • DC

文件：119.95 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 79A@ TC=25℃ ·Drain Source Voltage -VDSS=30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 6.0mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：261.32 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET 30 V, 76 A, Single N?묬hannel, DPAK/IPAK

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • AEC−Q101 Qualified and PPAP Capable − NVD4806N • These Devices are Pb−Free and are RoHS Compliant Applications • CPU Power Delivery • DC

文件：119.95 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

30 V, 76 A, Single N?묬hannel, DPAK/IPAK

Power MOSFET 30 V, 76 A, Single N−Channel, DPAK/IPAK Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • AEC−Q101 Qualified and PPAP Capable − NVD4806N • These Devices are Pb−Free and are RoHS

文件：123.85 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

N-Channel 30-V (D-S) MOSFET

文件：1.00245 Mbytes 页数：7 Pages

VBSEMI

微碧半导体

Single N-Channel Power MOSFET 30V, 76A, 6mΩ

Automotive Power MOSFET. 30V, 76A, 6 mOhm, Single N-Channel, DPAK, Logic Level. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications. Low RDS(on) to Minimize Conduction Losses\nLow Capacitance to Minimize Driver Losses\nOptimized Gate Charge to Minimize Switching Losses\nThese are Pb-Free Devices;

ONSEMI

安森美半导体