MOSFET – Power, Single, N-Channel, DPAK/IPAK 30 V, 88 A

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable

文件：250.3 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

Power MOSFET

文件：122.57 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Power MOSFET

ONSEMI

安森美半导体

N-Channel 30-V (D-S) MOSFET

文件：1.00247 Mbytes 页数：7 Pages

VBSEMI

微碧半导体

MOSFET – Power, Single, N-Channel, DPAK/IPAK 30 V, 88 A

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable

文件：250.3 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

Power MOSFET

文件：122.57 Kbytes 页数：8 Pages

ONSEMI

安森美半导体