MOSFET – Power, N-Channel 100 V, 17 A, 81 m

Features • Low RDS(on) • High Current Capability • 100 Avalanche Tested • NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：235.14 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

MOSFET – Power, N-Channel 100 V, 17 A, 81 m

Features • Low RDS(on) • High Current Capability • 100 Avalanche Tested • NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：235.14 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

N-channel Enhancement Mode Power MOSFET

Features  VDS= 100V, ID= 18.1 A RDS(ON)

文件：1.43471 Mbytes 页数：4 Pages

Bychip

百域芯

MOSFET – Power, N-Channel 100 V, 17 A, 81 m

Features • Low RDS(on) • High Current Capability • 100 Avalanche Tested • NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：235.14 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

N-Channel Power MOSFET 100 V, 17 A, 81 m

文件：142.81 Kbytes 页数：7 Pages

ONSEMI

安森美半导体