MOSFET – Power, Single, N-Channel, DPAK/IPAK 30 V, 88 A

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable

文件：250.3 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 95A@ TC=25℃ ·Drain Source Voltage -VDSS=30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 5mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：260.2 Kbytes 页数：2 Pages

ISC

无锡固电

MOSFET – Power, Single, N-Channel, DPAK/IPAK 30 V, 88 A

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable

文件：250.3 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

Power MOSFET

文件：122.57 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Power MOSFET

ONSEMI

安森美半导体