首页 >NVD5890NT4G>规格书列表
| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
NVD5890NT4G | Power MOSFET 40 V, 123 A, Single N?묬hannel DPAK Features • Low RDS(on) to Minimize Conduction Losses • MSL 1/260°C • AEC Q101 Qualified and PPAP Capable • 100 Avalanche Tested • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Motor Drivers • Pump Drivers for Automotive Braking, Steering and Other 文件:217.46 Kbytes 页数:8 Pages | ONSEMI 安森美半导体 | ONSEMI | |
NVD5890NT4G | Power MOSFET 40 V, 123 A, Single N?묬hannel DPAK 文件:116.93 Kbytes 页数:7 Pages | ONSEMI 安森美半导体 | ONSEMI | |
Power MOSFET 40 V, 123 A, Single N?묬hannel DPAK Features • Low RDS(on) to Minimize Conduction Losses • MSL 1/260°C • AEC Q101 Qualified and PPAP Capable • 100 Avalanche Tested • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Motor Drivers • Pump Drivers for Automotive Braking, Steering and Other 文件:217.46 Kbytes 页数:8 Pages | ONSEMI 安森美半导体 | ONSEMI | ||
包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 类别:分立半导体产品 晶体管 - FET,MOSFET - 单个 描述:NVD5890 - POWER MOSFET 40V, 123A | ONSEMI 安森美半导体 | ONSEMI |
详细参数
- 型号:
NVD5890NT4G
- 功能描述:
MOSFET 8-64MHZ 3.3V GP EMI
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON |
12+ |
TO-252 |
15000 |
全新原装,绝对正品,公司现货供应。 |
询价 | ||
ON |
24+/25+ |
2358 |
原装正品现货库存价优 |
询价 | |||
ON |
1706+ |
? |
7500 |
只做原装进口,假一罚十 |
询价 | ||
ON |
23+ |
TO-252 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
询价 | ||
三年内 |
1983 |
只做原装正品 |
询价 | ||||
ON/安森美 |
20+ |
TO-252 |
63258 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
AP |
23+ |
TO-220 |
69820 |
终端可以免费供样,支持BOM配单! |
询价 | ||
ON |
24+ |
NA |
3000 |
进口原装 假一罚十 现货 |
询价 | ||
ON/安森美 |
2022+ |
TO-252 |
50000 |
原厂代理 终端免费提供样品 |
询价 | ||
ON/安森美 |
22+ |
TO-252 |
14100 |
原装正品 |
询价 |
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