100W Isolated Power Supply

• Light weight, compact size • High efficiency, high reliability • Input under voltage protection • Over current, over voltage, thermal protection • UL, cUL, CE

文件：3.13913 Mbytes 页数：4 Pages

ETA-USA

eta-usa

100W Isolated Power Supply

• Light weight, compact size • High efficiency, high reliability • Input under voltage protection • Over current, over voltage, thermal protection • UL, cUL, CE

文件：3.13913 Mbytes 页数：4 Pages

ETA-USA

eta-usa

100W Isolated Power Supply

• Light weight, compact size • High efficiency, high reliability • Input under voltage protection • Over current, over voltage, thermal protection • UL, cUL, CE

文件：3.13913 Mbytes 页数：4 Pages

ETA-USA

eta-usa

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 12A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 94mΩ(Max)@VGS= 10V DESCRIPTION ·Power Supplies ·Inductive Loads ·Power Motor Control

文件：299.85 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel Enhancement Mode Power MOSFET

Features  VDS= 60V, ID= 50A RDS(ON)

文件：780.1 Kbytes 页数：5 Pages

BYCHIP

百域芯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 9A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.15Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter,

文件：353.68 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 9A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 170mΩ(Max)@VGS= 5V DESCRIPTION ·Power Supplies ·Inductive Loads ·Power Motor Control

文件：298.79 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：V360N65S3；Package：DPAK3；MOSFET ??Power, N-Channel, SUPERFET III, Easy Drive 650 V, 360 m, 10 A

Features • Ultra Low Gate Charge & Low Effective Output Capacitance • Lower FOM (RDS(on) max. x Qg typ. & RDS(on) max. x EOSS) • 100 Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：319.68 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

Power MOSFET 30 V, 117 A, Single N?묬hannel, DPAK/IPAK

Power MOSFET 30 V, 117 A, Single N−Channel, DPAK/IPAK Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • AEC Q101 Qualified − NVD4804N • These Devices are Pb−Free and are RoHS Compliant App

文件：92.7 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 124A@ TC=25℃ ·Drain Source Voltage -VDSS=25V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：259.769 Kbytes 页数：2 Pages

ISC

无锡固电