Single N-Channel Power MOSFET SUPERFET® III, Easy Drive, 650 V , 10 A, 360 mΩ, DPAK

- SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior swi • Low RDS (ON)\n• Minimize Conduction Losses\n• Low QG and Capacitance\n• Minimize Driver Losses\n• AEC−Q101 Qualified and PPAP Capable\n• Gull-wings to improve Board Level Reliability results\n• RoHS Compliant\n• Automotive Qualified;

ONSEMI

安森美半导体

丝印：V360N65S3；Package：DPAK3；MOSFET ??Power, N-Channel, SUPERFET III, Easy Drive 650 V, 360 m, 10 A

Features • Ultra Low Gate Charge & Low Effective Output Capacitance • Lower FOM (RDS(on) max. x Qg typ. & RDS(on) max. x EOSS) • 100 Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：319.68 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

包装：剪切带（CT） 类别：分立半导体产品 晶体管 - FET，MOSFET - 单个 描述：MOSFET N-CH 600V DPAK

ONSEMI

安森美半导体

MOSFET ??Power, N-Channel, SUPERFET III, Easy-Drive 650 V, 10 A, 360 m

General Description SuperFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction l

文件：498.76 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

MOSFET - Power, N?륝hannel, SUPERFET III, FAST 650 V, 360 m, 10 A

文件：356.61 Kbytes 页数：11 Pages

ONSEMI

安森美半导体

MOSFET - Power, N?륝hannel, SUPERFET III, FAST 650 V, 360 m, 10 A

文件：217.78 Kbytes 页数：10 Pages

ONSEMI

安森美半导体