NVD360N65S3

Marking：V360N65S3；Package：DPAK3；MOSFET ??Power, N-Channel, SUPERFET III, Easy Drive 650 V, 360 m, 10 A

Features •UltraLowGateCharge&LowEffectiveOutputCapacitance •LowerFOM(RDS(on)max.xQgtyp.&RDS(on)max.xEOSS) •100AvalancheTested •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant

NVD360N65S3

包装：剪切带（CT） 类别：分立半导体产品 晶体管 - FET，MOSFET - 单个 描述：MOSFET N-CH 600V DPAK

FCMT360N65S3

MOSFET??Power,N-Channel,SUPERFETIII,Easy-Drive650V,10A,360m

GeneralDescription SuperFETIIIMOSFETisONSemiconductor’sbrand−newhigh voltagesuper−junction(SJ)MOSFETfamilythatisutilizingcharge balancetechnologyforoutstandinglowon−resistanceandlowergate chargeperformance.Thisadvancedtechnologyistailoredtominimize conductionl

NTD360N65S3H

MOSFET-Power,N?륝hannel,SUPERFETIII,FAST650V,360m,10A

NTPF360N65S3H

MOSFET-Power,N?륝hannel,SUPERFETIII,FAST650V,360m,10A