Power MOSFET, N-Channel, SUPERFET® III, FAST, 650 V, 10 A, 360 mΩ, DPAK

SUPERFET III MOSFET is ON Semiconductor’s brand-new high\nvoltage super-junction (SJ) MOSFET family that is utilizing charge\nbalance technology for outstanding low on-resistance and lower gate\ncharge performance. This advanced technology is tailored to minimize\nconduction loss, provides superior • 700 V @ TJ = 150°C\n• Higher system reliability at low temperature operation\n• Ultra Low Gate Charge (Typ. Qg = 17.5 nC)\n• Low switching loss\n• Low Effective Output Capacitance (Typ. Coss(eff.) = 180 pF)\n• Low switching loss\n• Fast switching performance with robust body diode\n• Low switching;

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丝印：T360N65S3H；Package：D-PAK；MOSFET - Power, N?륝hannel, SUPERFET III, FAST 650 V, 360 m, 10 A

文件：356.61 Kbytes 页数：11 Pages

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MOSFET - Power, N?륝hannel, SUPERFET III, FAST 650 V, 360 m, 10 A

文件：217.78 Kbytes 页数：10 Pages

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MOSFET ??Power, N-Channel, SUPERFET III, Easy Drive 650 V, 360 m, 10 A

Features • Ultra Low Gate Charge & Low Effective Output Capacitance • Lower FOM (RDS(on) max. x Qg typ. & RDS(on) max. x EOSS) • 100 Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：319.68 Kbytes 页数：10 Pages

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