NTD360N65S3H中文资料Power MOSFET, N-Channel, SUPERFET® III, FAST, 650 V, 10 A, 360 mΩ, DPAK数据手册ONSEMI规格书

描述 Description

SUPERFET III MOSFET is ON Semiconductor’s brand-new high
voltage super-junction (SJ) MOSFET family that is utilizing charge
balance technology for outstanding low on-resistance and lower gate
charge performance. This advanced technology is tailored to minimize
conduction loss, provides superior switching performance, and
withstand extreme dv/dt rate.
Consequently, SUPERFET III FAST MOSFET series helps
minimize various power systems and improve system efficiency.

特性 Features

• 700 V @ TJ = 150°C
• Higher system reliability at low temperature operation
• Ultra Low Gate Charge (Typ. Qg = 17.5 nC)
• Low switching loss
• Low Effective Output Capacitance (Typ. Coss(eff.) = 180 pF)
• Low switching loss
• Fast switching performance with robust body diode
• Low switching loss and higher system reliability
• 100% Avalanche Tested
• RoHS Compliant
• Typ. RDS(on) = 296 m Ω
• Internal Gate Resistance: 0.9 Ω

应用 Application

• Computing
• Consumer
• Industrial
• Notebook / Desktop computer / Game console
• Telecom / Server
• LCD / LED TV
• LED Lighting / Ballast
• Adapter