丝印：FCMT360N65S3；Package：PQFN8；MOSFET ??Power, N-Channel, SUPERFET III, Easy-Drive 650 V, 10 A, 360 m

General Description SuperFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction l

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功率 MOSFET，N 沟道，SUPERFET® III，Easy Drive，650 V，10 A，360 mΩ，Power88

SUPERFET III MOSFET is ON Semiconductor's brand-new high voltage super-junction(SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching perfo • 700 V @ TJ = 150 oC\n• Higher system reliability at low temperature operation\n• Leadless Ultra-thin SMD package\n• High power density\n• Kelvin contact\n• Low gate noise and switching loss\n• Ultra Low Gate Charge (Typ. Qg = 18 nC)\n• Low switching loss\n• Low Effective Output Capacitance (Typ. C;

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MOSFET - Power, N?륝hannel, SUPERFET III, FAST 650 V, 360 m, 10 A

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MOSFET - Power, N?륝hannel, SUPERFET III, FAST 650 V, 360 m, 10 A

文件：217.78 Kbytes 页数：10 Pages

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MOSFET ??Power, N-Channel, SUPERFET III, Easy Drive 650 V, 360 m, 10 A

Features • Ultra Low Gate Charge & Low Effective Output Capacitance • Lower FOM (RDS(on) max. x Qg typ. & RDS(on) max. x EOSS) • 100 Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

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