NVD360N65S3中文资料Single N-Channel Power MOSFET SUPERFET® III, Easy Drive, 650 V , 10 A, 360 mΩ, DPAK数据手册ONSEMI规格书

描述 Description

- SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power systems for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability

特性 Features

• Low RDS (ON)
• Minimize Conduction Losses
• Low QG and Capacitance
• Minimize Driver Losses
• AEC−Q101 Qualified and PPAP Capable
• Gull-wings to improve Board Level Reliability results
• RoHS Compliant
• Automotive Qualified

应用 Application

• OBC
• HV DC/DC Converter
• On Board Charger
• DC/DC Converter

简介

NVD360N65S3属于分立半导体产品的晶体管-FETMOSFET-单个。由制造生产的NVD360N65S3晶体管 - FET，MOSFET - 单个分立式场效应晶体管 (FET) 广泛用于功率转换、电机控制、固态照明及其他应用，它们具有高频开关特性，同时又能承载大电流，使其在这些应用中具备一定优势。这类晶体管广泛应用于要求额定电压为几百伏或更低的应用，如果超出该额定电压值，则 IGBT 等其他器件更具竞争力。