100W Isolated Power Supply

• Light weight, compact size • High efficiency, high reliability • Input under voltage protection • Over current, over voltage, thermal protection • UL, cUL, CE

文件：3.13913 Mbytes 页数：4 Pages

ETA-USA

eta-usa

100W Isolated Power Supply

• Light weight, compact size • High efficiency, high reliability • Input under voltage protection • Over current, over voltage, thermal protection • UL, cUL, CE

文件：3.13913 Mbytes 页数：4 Pages

ETA-USA

eta-usa

100W Isolated Power Supply

• Light weight, compact size • High efficiency, high reliability • Input under voltage protection • Over current, over voltage, thermal protection • UL, cUL, CE

文件：3.13913 Mbytes 页数：4 Pages

ETA-USA

eta-usa

100W Isolated Power Supply

• Light weight, compact size • High efficiency, high reliability • Input under voltage protection • Over current, over voltage, thermal protection • UL, cUL, CE

文件：3.13913 Mbytes 页数：4 Pages

ETA-USA

eta-usa

100W Isolated Power Supply

• Light weight, compact size • High efficiency, high reliability • Input under voltage protection • Over current, over voltage, thermal protection • UL, cUL, CE

文件：3.13913 Mbytes 页数：4 Pages

ETA-USA

eta-usa

100W Isolated Power Supply

• Light weight, compact size • High efficiency, high reliability • Input under voltage protection • Over current, over voltage, thermal protection • UL, cUL, CE

文件：3.13913 Mbytes 页数：4 Pages

ETA-USA

eta-usa

100W Isolated Power Supply

• Light weight, compact size • High efficiency, high reliability • Input under voltage protection • Over current, over voltage, thermal protection • UL, cUL, CE

文件：3.13913 Mbytes 页数：4 Pages

ETA-USA

eta-usa

MOSFET –Power, N-Channel, DPAK 20 A, 30 V

This logic level vertical power MOSFET is a general purpose part that provides the “best of design” available today in a low cost power package. Avalanche energy issues make this part an ideal design in. The drain−to−source diode has a ideal fast but soft recovery. Features • Ultra−Low RDS(

文件：212.67 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 20A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 27mΩ(Max)@VGS= 5V DESCRIPTION ·Power Supplies ·Inductive Loads ·PWM Motor Controls

文件：299.31 Kbytes 页数：2 Pages

ISC

无锡固电

MOSFET –Power, N-Channel, DPAK 20 A, 30 V

This logic level vertical power MOSFET is a general purpose part that provides the “best of design” available today in a low cost power package. Avalanche energy issues make this part an ideal design in. The drain−to−source diode has a ideal fast but soft recovery. Features • Ultra−Low RDS(

文件：212.67 Kbytes 页数：7 Pages

ONSEMI

安森美半导体