P-channel Enhancement Mode Power MOSFET

Features  VDS= -60V, ID= -50A RDS(ON)

文件：889.04 Kbytes 页数：4 Pages

BYCHIP

百域芯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 38A@ TC=25℃ ·Drain Source Voltage -VDSS=40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 26mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：260.48 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 24A@ TC=25℃ ·Drain Source Voltage -VDSS=60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 37mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：259.529 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 54A@ TC=25℃ ·Drain Source Voltage -VDSS=60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 17mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：259.97 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 17A@ TC=25℃ ·Drain Source Voltage -VDSS=60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 64mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：261.01 Kbytes 页数：2 Pages

ISC

无锡固电

Single N?묬hannel Power MOSFET

MOSFET – Power, Single, N-Channel 60 V, 64 m, 17 A Features • Low RDS(on) to Minimize Conduction Losses • High Current Capability • Avalanche Energy Specified • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

文件：117.83 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Single N?묬hannel Power MOSFET

MOSFET – Power, Single, N-Channel 60 V, 64 m, 17 A Features • Low RDS(on) to Minimize Conduction Losses • High Current Capability • Avalanche Energy Specified • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

文件：117.83 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 101A@ TC=25℃ ·Drain Source Voltage -VDSS= 40 V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.4mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：261.06 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 85A@ TC=25℃ ·Drain Source Voltage -VDSS= 40 V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 5.7mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：260.67 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 51A@ TC=25℃ ·Drain Source Voltage -VDSS= 40 V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 9.5mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：260.86 Kbytes 页数：2 Pages

ISC

无锡固电