NVD5803N

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=85A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=5.7mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

NVD5803N

Power MOSFET 40V, 85A, 5.7 mOhm, Single N-Channel, DPAK.; • Low on-resistance\n• High current capability\n• 100% avalanche energy tested;

Automotive Power MOSFET. 40V, 85A, 5.7 mOhm, Single N-Channel, DPAK. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.

NVD5803N

Power MOSFET 40 V, 85 A, Single N?묬hannel, DPAK

NVD5803N

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NVD5803NT4G

Power MOSFET 40 V, 85 A, Single N?묬hannel, DPAK

NVD5803NT4G

Power MOSFET