Power MOSFET 30 V, 63 A, Single N?묬hannel, DPAK/IPAK

MOSFET – Power, Single, N-Channel, DPAK/IPAK 30 V, 63 A Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • NVD Prefix for Automotive and Other Applications Requiring Unique Site and Contr

文件：167.31 Kbytes 页数：8 Pages

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 63A@ TC=25℃ ·Drain Source Voltage -VDSS=30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 8.0mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：260.68 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel Advanced Mode Power MOSFET

Features  VDS= 40V, ID= 150A RDS(ON)

文件：1.043349 Mbytes 页数：4 Pages

BYCHIP

百域芯

Power MOSFET 30 V, 63 A, Single N?묬hannel, DPAK/IPAK

MOSFET – Power, Single, N-Channel, DPAK/IPAK 30 V, 63 A Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • NVD Prefix for Automotive and Other Applications Requiring Unique Site and Contr

文件：167.31 Kbytes 页数：8 Pages

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安森美半导体

Power MOSFET

文件：122.02 Kbytes 页数：8 Pages

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Power MOSFET 30V 63A 8 mOhm Single N-Channel DPAK

Automotive Power MOSFET. 30V, 63A, 8 mOhm, Single N-Channel, DPAK, Logic Level. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications. • Low RDS(on) to Minimize Conduction Losses\n• Optimized Gate Charge to Minimize Switching Losses;

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安森美半导体