MOSFET – Power, Single N-Channel, 8FL

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications • Power Tools, Battery Operated Vacuum

文件：215.04 Kbytes 页数：7 Pages

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安森美半导体

Single N-Channel Power MOSFET 60V, 24A, 22.6mΩ

Single N-Channel Power MOSFET 60V, 24A, 22.6mΩ • Low RDS(on)\n• Small Footprint (3.3x3.3 mm)\n• RoHS Compliant;

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安森美半导体

MOSFET ??Power, Dual N-Channel, SO-8FL 60 V, 22.6 m, 24 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFWD024N06C − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Hal

文件：255.85 Kbytes 页数：7 Pages

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安森美半导体

MOSFET - Power, Single N-Channel, SO-8 FL 60 V, 22 m, 25 A

文件：143.63 Kbytes 页数：6 Pages

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安森美半导体

MOSFET - Power, Single N-Channel, 8FL 60 V, 22.6 m, 24 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVTFWS024N06C − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Fre

文件：283.2 Kbytes 页数：8 Pages

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安森美半导体