NTTFS3D7N06HL

N-Channel Shielded Gate PowerTrench® MOSFET 60 V, 103 A, 3.9 mΩ; • Max rDS(on) = 3.9 mΩ at VGS = 10 V, ID =23 A\n• Lowers conduction Loss\n• Low Qg/Coss\n• Lowers Switching loss\n• Shielded Gate MOSFET Technology\n• Max rDS(on) = 5.2 mΩ at VGS = 4.5 V, ID = 18A\n• MSL1 Robust Package Design\n• 100% UIL Tested\n• RoHS Compliant\n;

This N-Channel MV MOSFET is produced using an advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance.

NTTFS3D7N06HL

MOSFET - Single N-Channel 60 V, 3.9 m, 103 A

NTTFS3D7N06HLTWG

丝印：S3D7；Package：WDFN8；MOSFET - Single N-Channel 60 V, 3.9 m, 103 A