MOSFET - Single N-Channel 40 V, 2.1 m, 150 A

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丝印：S2D1；Package：PQFN8；MOSFET - Single N-Channel 40 V, 2.1 m, 150 A

文件：507.07 Kbytes 页数：7 Pages

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N-Channel Shielded Gate PowerTrench® MOSFET 40 V, 150 A, 2.1 mΩ

This N-Channel MV MOSFET is produced using an advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance. • Shielded Gate MOSFET Technology\n• Superior Switching FOM\n• Max rDS(on) = 2.1 mΩ at VGS = 10 V, ID =23 A\n• Low conduction loss\n• Max rDS(on) = 3.3 mΩ at VGS = 4.5 V, ID = 18A\n• Lowers Switching Noise/EMI\n• MSL1 Robust Package Design\n• 100% UIL Tested\n• RoHS Compliant;

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MOSFET ??Power, Single N-Channel 40 V, 2.5 m, 132 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK4 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：336.14 Kbytes 页数：7 Pages

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安森美半导体

MOSFET ??Power, Single N-Channel 40 V, 2.5 m, 132 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK4 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：336.14 Kbytes 页数：7 Pages

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安森美半导体