丝印：80NG；Package：u8FL；MOSFET - Power, Single N-Channel, 8FL 100 V, 72 m, 16 A

Features • Wide SOA for Linear Mode Operation • Low RDS(on) to Minimize Conduction Losses • High Peak UIS Current Capability for Ruggedness • Small Footprint (3.3 x 3.3 mm) for Compact Design • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications •

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ONSEMI

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MOSFET Power, Single N-Channel, μ8FL, 100V, 82mΩ, 15A

MOSFET Power, Single N-Channel, μ8FL, 100V, 82mΩ, 15A • Avalanche Energy Specified\n• Rugged technology for utmost reliability\n• Specifically designed for Wide SOA applications from a 48V Bus\n• Hot Swap tolerant with superior SOA curve than std mosfet\n• These Devices are Pb−Free, Halogen−Free / BFR−Free and are RoHS Compliant\n• ROHS compliant\n• Lo;

ONSEMI

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N-Channel Enhancement Mode Power MOSFET

Description The G080N10M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.0175 Mbytes 页数：6 Pages

GOFORD

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N-Channel Enhancement Mode Power MOSFET

Description The G080N10T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.04223 Mbytes 页数：6 Pages

GOFORD

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N-Channel Enhancement Mode Power MOSFET

Description The GT080N10K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.06561 Mbytes 页数：6 Pages

GOFORD

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