MOSFET - Power, Single N-Channel, STD Gate, 8FL 40 V, 1.43 m, 178 A

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Small Footprint (3.3 x 3.3 mm) for Compact Design • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Motor Drive • Battery Protection • Synchronous Rec

文件：216.24 Kbytes 页数：7 Pages

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安森美半导体

丝印：1D4N4；Package：WDFN8；MOSFET - Power, Single N-Channel, STD Gate, 8FL 40 V, 1.43 m, 178 A

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Small Footprint (3.3 x 3.3 mm) for Compact Design • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Motor Drive • Battery Protection • Synchronous Rec

文件：216.24 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET - Power, SingleN-Channel, STD Gate, Power3340 V, 1.43 mΩ, 178 A

The latest 40V standard gate level Power MOSFET Technology with best-in-class On-Resistance for motor driver application. Lower On-Resistance and less gate charge can reduce conduction loss and driving loss. Good softness control for body diode reverse recovery can reduce voltage spike stress withou • Low RDS(on)\n• Low Capacitance\n• Small Footprint (3.3 x 3.3 mm);

ONSEMI

安森美半导体

WDFN-8

ON

上传：深圳市金嘉锐电子有限公司

WDFN-8

ON

上传：深圳市澳亿芯电子科技有限公司