N-Channel Shielded Gate PowerTrench® MOSFET 100V, 142A, 3.2mΩ

This N-Channel MV MOSFET is produced using an advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with very low Qg and Qoss. •Shielded Gate MOSFET Technology\n• High efficiency andLowers switching noise/EMI\n• Max rDS(on) = 3.5 mΩ at VGS = 10 V, ID = 50 A\n• Low RDS(on) to Minimize Conduction Losses\n• Max rDS(on) = 5.8 mΩ at VGS = 6 V, ID = 30.5 A\n• Low QG and Capacitance to Minimize Driver Losses\n• 50% lower Qrr t;

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MOSFET ??Power, Single, N-Channel 100 V, 3.5 m, 142 A

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