N-Channel Shielded Gate PowerTrench® MOSFET 100V, 142A, 3.2mΩ

This N-Channel MV MOSFET is produced using an advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with very low Qg and Qoss. •Shielded Gate MOSFET Technology\n• High efficiency andLowers switching noise/EMI\n• Max rDS(on) = 3.5 mΩ at VGS = 10 V, ID = 50 A\n• Low RDS(on) to Minimize Conduction Losses\n• Max rDS(on) = 5.8 mΩ at VGS = 6 V, ID = 30.5 A\n• Low QG and Capacitance to Minimize Driver Losses\n• 50% lower Qrr t;

ONSEMI

安森美半导体

MOSFET ??Power, Single, N-Channel 100 V, 3.5 m, 142 A

文件：202.25 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

SO-8 FL

ON

上传：深圳市壹芯创科技有限公司

SO-8FL

ON

上传：深圳市天芯半导体科技有限公司

DFN-5

ON

上传：深圳市壹芯创科技有限公司