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文件：223.06 Kbytes 页数：2 Pages

ONSEMI

安森美半导体

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文件：223.06 Kbytes 页数：2 Pages

ONSEMI

安森美半导体

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Power MOSFET 30 V, 90 A, Single N-Channel, SO-8 FL • Low RDS(on) to Minimize Conduction Losses\n• Low Capacitance to Minimize Driver Losses\n• Optimized Gate Charge to Minimize Switching Losses\n• These are Pb-Free Devices;

ONSEMI

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High Frequency Wire Wound Transformers

文件：2.64042 Mbytes 页数：14 Pages

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SPLIT BOBBIN HIGH ISOLATION POWER TRANSFORMERS

文件：71.46 Kbytes 页数：2 Pages

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SPLIT BOBBIN HIGH ISOLATION POWER TRANSFORMERS

文件：71.46 Kbytes 页数：2 Pages

PMI