NTMFS3D2N10MD数据手册ONSEMI中文资料规格书

描述 Description

This N-Channel MV MOSFET is produced using an advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with very low Qg and Qoss.

特性 Features

•Shielded Gate MOSFET Technology
• High efficiency andLowers switching noise/EMI
• Max rDS(on) = 3.5 mΩ at VGS = 10 V, ID = 50 A
• Low RDS(on) to Minimize Conduction Losses
• Max rDS(on) = 5.8 mΩ at VGS = 6 V, ID = 30.5 A
• Low QG and Capacitance to Minimize Driver Losses
• 50% lower Qrr than other MOSFET suppliers
• Low QRR, Soft Recovery Body Diode
• Lowers switching noise/EMI
• Low QOSS to Improve Light Load Efficiency
•MSL1 robust package design
•100% UIL tested
•RoHS Compliant
• Very Low RDS*Qoss

应用 Application

• This product is general usage and suitable for many different applications.
• Isolated DC-DC primary switches
• AC-DC Synchronous Rectification
• High Switching Frequency Synchronous Buck
• Power Supplies
• Motor Drive