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NTMFS10N3D2C中文资料N 沟道，屏蔽门极，PowerTrench® MOSFET，100 V，151A，3.2mΩ数据手册ONSEMI规格书
NTMFS10N3D2C规格书详情
描述 Description
This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced Power Trench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.
特性 Features
• Low Qrr
• Miniuze switching loss
• Soft recovery body diode
• Reduced EMI and voltage spike
• Low RDS(on)
• Minimize conduction loss
• Small Footprint (5 x 6 mm)
• Compact design
• Shielded Gate MOSFET Technology
• MSL1 Robust Package Design
• 100% UIL Tested
• RoHS Compliant
应用 Application
• Motor Control
• DC-DC Converters
• Battery Management
• Solar Inverters
• Multi Rotor Drones, Power Tools
• Power Supplies
• Battery Packs and Chargers
• Power Optimizers
技术参数
- 制造商编号
：NTMFS10N3D2C
- 生产厂家
：ONSEMI
- Pb-free
：Pb
- Halide free
：H
- Status
：Active
- Channel Polarity
：N-Channel
- Configuration
：Single
- V(BR)DSS Min (V)
：100
- VGS Max (V)
：±20
- VGS(th) Max (V)
：4
- ID Max (A)
：151
- PD Max (W)
：138
- RDS(on) Max @ VGS = 2.5 V(mΩ)
：-
- RDS(on) Max @ VGS = 4.5 V(mΩ)
：-
- RDS(on) Max @ VGS = 10 V(mΩ)
：3.2
- Qg Typ @ VGS = 4.5 V (nC)
：-
- Qg Typ @ VGS = 10 V (nC)
：60
- Ciss Typ (pF)
：4439
- Package Type
：PQFN-8
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ONSEMI |
2025+ |
PQFN EP |
55740 |
询价 | |||
NK/南科功率 |
2025+ |
DFN5X6 |
986966 |
国产 |
询价 | ||
onsemi(安森美) |
24+ |
PQFN-8 |
9908 |
支持大陆交货,美金交易。原装现货库存。 |
询价 | ||
ONSEMI |
25+ |
N/A |
13350 |
原装现货17377264928微信同号 |
询价 | ||
ONSEMI/安森美 |
2511 |
DFN55x6 |
360000 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
询价 | ||
ONSEMI/安森美 |
22+ |
DFN5X6 |
25800 |
原装正品支持实单 |
询价 | ||
三年内 |
1983 |
只做原装正品 |
询价 | ||||
24+ |
N/A |
48000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 | |||
ON |
20+ |
DFN8 |
10323 |
终端可以免费供样,支持BOM配单! |
询价 | ||
ON(安森美) |
2447 |
Power-56-8 |
115000 |
3000个/圆盘一级代理专营品牌!原装正品,优势现货, |
询价 |
