N 沟道，屏蔽门极，PowerTrench® MOSFET，100 V，151A，3.2mΩ

This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced Power Trench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode. • Low Qrr\n• Miniuze switching loss\n• Soft recovery body diode\n• Reduced EMI and voltage spike\n• Low RDS(on)\n• Minimize conduction loss\n• Small Footprint (5 x 6 mm)\n• Compact design\n• Shielded Gate MOSFET Technology\n• MSL1 Robust Package Design\n• 100% UIL Tested\n• RoHS Compliant;

ONSEMI

安森美半导体

N-Channel Shielded Gate PowerTrench MOSFET

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ONSEMI

安森美半导体

SO-8 FL

ON

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SO-8FL

ON

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DFN-5

ON

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