SWITCHING N-CHANNEL POWER MOS FET

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RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 3.8 mΩ MAX. (VGS = 10 V, ID = 30 A) • High current rating ID(DC) = ±60 A • Low input capacitance Ciss = 5000 pF TYP. • Designed for automotive application and AEC

文件：313.23 Kbytes 页数：10 Pages

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瑞萨

N-Channel 30-V (D-S) MOSFET

文件：1.01804 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

SOP-8

南麟

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14-SOIC 模块

Amphenol Advanced Sensors

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