IXTH12N100

MegaMOSFET

N-ChannelEnhancementMode Features ●Internationalstandardpackages ●LowRDS(on)HDMOS™process ●Ruggedpolysilicongatecellstructure ●Lowpackageinductance(

IXTH12N100

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=12A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.05Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

IXTH12N100L

iscN-ChannelMOSFETTransistor

·FEATURES ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.3Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ·APPLICATIONS ·Switchingapplications

IXTH12N100L

LinearTMPowerMOSFETw/ExtendedFBSOA

Linear™PowerMOSFETw/ExtendedFBSOA N-ChannelEnhancementMode AvalancheRated Features •InternationalStandardPackage •DesignedforLinearOperation •AvalancheRated •MoldingEpoxyMeetsUL94V-0 FlammabilityClassification Advantages •EasytoMount •SpaceSavings •High

IXTH12N100Q

NotforNewDesigns:Contactthefactoryforleadtimes(partisstillavailableforpurchase).

IXTM12N100

MegaMOSFET

N-ChannelEnhancementMode Features ●Internationalstandardpackages ●LowRDS(on)HDMOS™process ●Ruggedpolysilicongatecellstructure ●Lowpackageinductance(

RM12N100LD

N-ChannelEnhancementModePowerMOSFET

Description TheRM12N100LDusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures VDS=100V,ID=12A RDS(ON)