首页 >NE760>规格书列表

型号下载 订购功能描述制造商 上传企业LOGO

NE760

LOW NOISE KU-K BAND GAAS MESFET

文件:276.35 Kbytes 页数:7 Pages

NEC

瑞萨

NE760

LOW NOISE KU-K BAND GAAS MESFET

Renesas

瑞萨

NE76000

GaAs MES FET

C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • Low noise figure NF = 1.6 dB TYP. at f = 12 GHz • High associated gain Ga = 9.0 dB TYP. at f = 12 GHz • Gate length: Lg = 0.3 Pm • Gate width: Wg = 280 Pm

文件:195.08 Kbytes 页数:10 Pages

RENESAS

瑞萨

NE76038

GaAs MES FET

GENERAL PURPOSE N-CHANNEL GaAs MES FET DESCRIPTION NE76038 is a N-channel GaAs MES FET housed in plastic package. The device is fabricated by ion implantation for improved RF and DC performance reliability and uniformity. Its excellent low noise and high associated gain make it suitable fo

文件:193.69 Kbytes 页数:14 Pages

RENESAS

瑞萨

NE76038-T1

丝印:A;GaAs MES FET

GENERAL PURPOSE N-CHANNEL GaAs MES FET DESCRIPTION NE76038 is a N-channel GaAs MES FET housed in plastic package. The device is fabricated by ion implantation for improved RF and DC performance reliability and uniformity. Its excellent low noise and high associated gain make it suitable fo

文件:193.69 Kbytes 页数:14 Pages

RENESAS

瑞萨

NE76038-T1A

GaAs MES FET

GENERAL PURPOSE N-CHANNEL GaAs MES FET DESCRIPTION NE76038 is a N-channel GaAs MES FET housed in plastic package. The device is fabricated by ion implantation for improved RF and DC performance reliability and uniformity. Its excellent low noise and high associated gain make it suitable fo

文件:193.69 Kbytes 页数:14 Pages

RENESAS

瑞萨

NE76083A

GaAs MES FET

C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • Low noise figure NF = 1.6 dB TYP. at f = 12 GHz (NE76083A) NF = 2.4 dB MAX. at f = 12 GHz (NE76083A-2.4) • High associated gain Ga = 9.0 dB TYP. at f = 12 GHz (NE76083A) Ga = 9.0 dB TYP. at f = 12 GHz (NE76083A-2.4) • Ga

文件:197.97 Kbytes 页数:10 Pages

RENESAS

瑞萨

NE76084

GaAs MES FET

C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • Low noise figure & High associated gain NF = 1.6 dB TYP., Ga = 9.0 dB TYP. at f = 12 GHz • Gate length: Lg = 0.3 mm • Gate width : Wg = 280 mm

文件:190.51 Kbytes 页数:14 Pages

RENESAS

瑞萨

NE76084

C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

文件:62.53 Kbytes 页数:12 Pages

NEC

瑞萨

NE76084-SL

C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

文件:62.53 Kbytes 页数:12 Pages

NEC

瑞萨

详细参数

  • 型号:

    NE760

  • 制造商:

    NEC

  • 制造商全称:

    NEC

  • 功能描述:

    LOW NOISE KU-K BAND GAAS MESFET

供应商型号品牌批号封装库存备注价格
NEC
01+
178
全新原装进口自己库存优势
询价
LINEAR
23+
SOT23-6
5000
原装正品,假一罚十
询价
24+
3000
公司存货
询价
NEC
23+
NA
3580
全新原装假一赔十
询价
NEC
08+
原厂封装
24000
宇航IC只做原装假一罚十
询价
NEC
25+
N/A
90000
一级代理商进口原装现货、价格合理
询价
NEC
24+
10000
全新原装
询价
NEC
19+
20000
890
询价
NEC
24+
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
询价
NEC
18+
原厂原装假一赔十
20000
原厂很远现货很近,找现货选星佑电子,原厂原装假一赔
询价
更多NE760供应商 更新时间2026-4-17 9:31:00