10 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

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NEC

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GaAs MES FET

10 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE6501077 is power GaAs FET which provides high gain, high efficiency and high output power in L, S band. To reduce thermal resistance, the device has a PHS (Plated Heat Sink) structure. FEATURES • Class A operation • H

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RENESAS

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L/S BAND MEDIUM POWER GaAs MESFET

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CEL

10 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET

Renesas

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L/S BAND MEDIUM POWER GaAs MESFET

DESCRIPTION The NE6501077 is a medium power GaAs MESFET designed for up to a 10 W output stage or as a driver for high power devices. The device has no internal matching and can be used from UHF frequencies up to 3.0 GHz. The chips used in this series offer superior reliability and consistent per

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CEL