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NE6501077

10 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NE6501077

GaAs MES FET

10WL,S-BANDPOWERGaAsFET N-CHANNELGaAsMESFET DESCRIPTION TheNE6501077ispowerGaAsFETwhichprovides highgain,highefficiencyandhighoutputpowerinL,Sband. Toreducethermalresistance,thedevicehasaPHS (PlatedHeatSink)structure. FEATURES •ClassAoperation •H

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

NE6501077

L/S BAND MEDIUM POWER GaAs MESFET

CEL

California Eastern Laboratories

NE6501077_00

L/S BAND MEDIUM POWER GaAs MESFET

DESCRIPTION TheNE6501077isamediumpowerGaAsMESFETdesignedforuptoa10Woutputstageorasadriverforhighpowerdevices.ThedevicehasnointernalmatchingandcanbeusedfromUHFfrequenciesupto3.0GHz.Thechipsusedinthisseriesoffersuperiorreliabilityandconsistentper

CEL

California Eastern Laboratories

详细参数

  • 型号:

    NE6501077

  • 功能描述:

    射频GaAs晶体管 L&S Band GaAs MESFET

  • RoHS:

  • 制造商:

    TriQuint Semiconductor

  • 技术类型:

    pHEMT

  • 频率:

    500 MHz to 3 GHz

  • 增益:

    10 dB

  • 噪声系数:

    正向跨导

  • gFS(最大值/最小值):

    4 S 漏源电压

  • 闸/源击穿电压:

    - 8 V

  • 漏极连续电流:

    3 A

  • 最大工作温度:

    + 150 C

  • 功率耗散:

    10 W

供应商型号品牌批号封装库存备注价格
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1688
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8510
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1923+
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莱克讯原厂货源每一片都来自原厂原装现货薄利多
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更多NE6501077供应商 更新时间2024-5-22 10:30:00